Oxide scale formation and isothermal oxidation behavior of Mo–Si–B intermetallics at 600–1000°C
Tóm tắt
Từ khóa
Tài liệu tham khảo
Anton, 1991, High temperature properties of refractory intermetallics, Mat Res Soc Symp Proc, 213, 733, 10.1557/PROC-213-733
Meyer, 1996, Oxidation behavior of boron modified Mo5Si3 at 800–1300°C, J Am Ceram Soc, 79, 938, 10.1111/j.1151-2916.1996.tb08528.x
Zhang SL, Ghez R, d'Heurle FM. A mathematical model for silicide oxidation. J Electrochem Soc 1990;137(2).
D'Heurle, 1987, Thermal oxidation of silicides on silicon, Phil Mag, B55, 291, 10.1080/13642818708211210
Bartlett, 1965, Structure and chemistry of oxide films thermally grown on molybdenum silicides, J Am Ceram Soc, 48, 551, 10.1111/j.1151-2916.1965.tb14671.x
Berkowitz-Mattuck, 1965, High-temperature oxidation: II. Molybdenum silicides, J Electrochem Soc, 112, 583, 10.1149/1.2423612
Beyers, 1984, Thermodynamic considerations in refractory metal–silicon–oxygen systerns, J Appl Phys, 56, 147, 10.1063/1.333738