Shinohara, 1984, Japan. J. appl. Phys., 23, l371, 10.1143/JJAP.23.L371
and , Progress in Solid State Chemistry, Pergamon Press, New York 1975 (p. 157).
Wood, 1981, J. Crystal Growth, 51, 299, 10.1016/0022-0248(81)90314-6
Bachrach, 1981, J. Vacuum Sci. Technol., 18, 756, 10.1116/1.570942
Morkoc, 1982, Japan. J. appl. Phys., 21, l230, 10.1143/JJAP.21.L230
Bafleur, 1983, Thin Solid Films, 101, 299, 10.1016/0040-6090(83)90097-4
Chai, 1981, Appl. Phys. Letters, 38, 796, 10.1063/1.92167
Metze, 1983, J. Vacuum Sci. Technol., B1, 166, 10.1116/1.582525
Ito, 1984, Japan. J. appl. Phys., 23, l524, 10.1143/JJAP.23.L524
Bafleur, 1982, J. Crystal Growth, 59, 531, 10.1016/0022-0248(82)90374-8
Suzuki, 1984, Japan. J. appl. Phys., 23, 164, 10.1143/JJAP.23.164
Weng, 1985, Appl. Phys. Letters, 47, 391, 10.1063/1.96177
Pettit, 1984, J. Vacuum Sci. Technol. B, 2, 241, 10.1116/1.582794
Givargizov, 1975, J. Crystal Growth, 31, 20, 10.1016/0022-0248(75)90105-0
Wagner, 1965, Trans. MS AIME, 233, 1053
Barns, 1965, J. appl. Phys., 36, 2296, 10.1063/1.1714466
Hwang, 1983, J. Electrochem. Soc., 130, 493, 10.1149/1.2119737