Organic nano-floating-gate transistor memory with metal nanoparticles

Luu Van Tho1, Kang‐Jun Baeg2, Yong‐Young Noh1
1Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil Jung-gu, Seoul, 04620, Republic of Korea
2Department of Graphic Arts Information Engineering, Pukyong National University, 365 Sinseon-ro, Nam-gu, Busan, 48547, Republic of Korea

Tóm tắt

Từ khóa


Tài liệu tham khảo

K.-J. Baeg, M. Caironi, Y.-Y. Noh, Adv. Mater. 25, 4210–4244 (2013)

S.H. Ju, J.H. Li, J. Liu, P.C. Chen, Y.G. Ha, F. Ishikawa, H. Chang, C. Zhou, A. Facchetti, D.B. Janes, T.J. Marks, Nano. Lett. 8, 997–1004 (2008)

Y. Feng, X. Ju, W. Feng, H. Zhang, Y. Cheng, J. Liu, A. Fujii, M. Ozaki, K. Yoshino, Appl. Phys. Lett. 94, 123302–123305 (2009)

K.-J. Baeg, M. Binda, D. Natali, M. Caironi, Y.-Y. Noh, Adv. Mater. 25, 4267–4295 (2013)

C.A. Di, G. Yu, Y.Q. Liu, D. Zhu, J. Phys. Chem. B 111, 14083–14096 (2007)

H. Klauk, U. Zschieschang, J. Pflaum, M. Halik, Nature. 445, 745–748 (2007)

I.W. Moran, A.L. Briseno, S. Loser, K.R. Carter, Chem. Mater. 20, 4595–4608 (2008)

U. Zschiesching, H. Klauk, M. Halik, G. Schmid, C. Dehm, Adv. Mater. 15, 1147–1152 (2003)

Q.-D. Ling, D.-J. Liaw, C. Zhu, D.S.-H. Chan, E.-T. Kang, K.-G. Neoh, Prog. Polym. Sci. 33, 917–978 (2008)

S. Moller, C. Perlov, W. Jackson, C. Taussig, S.R. Forrest, Nature. 426, 166–169 (2003)

R.J. Tseng, J. Huang, J. Ouyang, R.B. Kaner, Y. Yang, Nano. Lett. 5, 1077–1080 (2005)

R. Schroeder, L.A. Majewski, M. Grell, Adv. Mater. 16, 633–636 (2004)

R.C.G. Naber, C. Tanase, P.W.M. Blom, G.H. Gelinck, A.W. Marsman, F.J. Touwslager, S. Setayesh, D.M. De Leeuw, Nat. Mater. 4, 243–248 (2005)

H.E. Katz, X.M. Hong, A. Dodabalapur, R. Sarpeshkar, J. Appl. Phys. 91, 1572–1576 (2002)

T.B. Singh, N. Marjanovic, G.J. Matt, N.S. Sariciftci, R. Schwodiauer, S. Bauer, Appl. Phys. Lett. 85, 5409–5411 (2004)

K.-J. Baeg, Y.-Y. Noh, J. Ghim, S.-J. Kang, H. Lee, D.-Y. Kim, Adv. Mater. 18, 3179–3183 (2006)

K.-J. Baeg, Y.-Y. Noh, J. Ghim, B. Lim, D.-Y. Kim, Adv. Funct. Mater. 18, 3678–3685 (2008)

G. Gelinck, Nature. 445, 268–270 (2007)

Y. Yoshimitsu, K. Yoshinari, M. Toshimasa, IEEE Trans. Electron. Devices. 60, 2518–2524 (2013)

C.Y. Lu, K.Y. Hsieh, R. Liu, Microelectron. Eng. 86, 283–286 (2009)

C.Z. Zhao, J.F. Zhang, M.B. Zahid, G. Groeseneken, R. Degraeve, S.D. Gendt, Appl. Phys. Lett. 89, 023507:1–023507:3 (2006)

C.A.P. Dearaujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, J.F. Scott, Nature. 374, 627–629 (1995)

B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, D. Finzi, IEEE Electron. Device. Lett. 21, 543–545 (2000)

M.H. White, D.A. Adams, J.K. Bu, IEEE Circuits. Devices. 16, 22–31 (2000)

J.K. Bu, M.H. White, Solid-State. Electron. 45, 113–120 (2001)

Y.C. King, T.J. King, C.M. Hu, IEEE Trans. Electron. Devices. 48, 696–700 (2001)

E. Kapetanakis, P. Normand, D. Tsoukalas, K. Beltsios, J. Stoemenos, S. Zhang, J. van den Berg, Appl. Phys. Lett. 77, 3450–3452 (2000)

J. De Blauwe, IEEE Trans. Nanotechnol. 1, 72–77 (2002)

Z.T. Liu, C. Lee, V. Narayanan, G. Pei, E.C. Kan, IEEE Trans. Electron. Devices. 49, 1606–1613 (2002)

Y.M. Kim, S.J. Kim, J.S. Lee, IEEE Electron. Device. Lett. 31, 503–505 (2010)

W. Hong, P.Y. Quan, J.I.Z. Yu, L. Ming, S.L. Wei, L.X. Hua, Chin. Sci. Bull. 56, 1325–1332 (2011)

P. Pavan, R. Bez, P. Olivo, E. Zanoni, Proc. IEEE. 85, 1248–1271 (1997)

C.G.P. Cappelletti, P. Olivo, E. Zanoni, Flash Memories (Kluwer Academic Publishers, Dordrecht, 1999)

R. Bez, E. Camerlenghi, A. Modelli, A. Visconti, Proc. IEEE. 91, 489–502 (2003)

K. Kim, S.Y. Lee, Microelectron. Eng. 84, 1976–1981 (2007)

Y. King, University of California (Thin dielectric technology and memory devices, Berkeley, 1999), p. 60–61

Z. Liu, F. Xue, Y. Su, Y.M. Lvov, K. Varahramyan, IEEE Trans. Nanotechnol. 5, 379–384 (2006)

D.V. Talapin, J.S. Lee, M.V. Kovalenko, E.V. Shevchenko, Chem. Rev. 110, 389–458 (2010)

Z.T. Liu, C. Lee, V. Narayanan, G. Pei, E.C. Kan, IEEE Trans. Electron. Devices. 49, 1606–1613 (2002)

C.H. Lee, J. Meteer, V. Narayanan, E.C. Kan, J. Electron. Mater. 34, 27–33 (2005)

S.J. Kim, Y.S. Park, S.H. Lyu, J.S. Lee, Appl. Phys. Lett. 96, 033302–033304 (2010)

K.C. Chan, P.F. Lee, J.Y. Dai, Appl. Phys. Lett. 92, 223105–223107 (2008)

L. Zhen, W. Guan, L. Shang, M. Liu, G. Liu, J. PhysD. 41, 135111–135115 (2008)

M.F. Chang, P.T. Lee, S.P. McAlister, A. Chin, Appl. Phys. Lett. 93, 233302–233304 (2008)

T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, T. Someya, Science. 326, 1516–1519 (2009)

W. Wang, J. Shi, D. Ma, IEEE Trans. Electron. Devices. 56, 1036–1039 (2009)

K.-J. Baeg, Y.-Y. Noh, H. Sirringhaus, D.-Y Kim. Adv. Funct. Mater. 20, 224–230 (2010)

S.W. Ryu, J.W. Lee, J.W. Han, S. Kim, Y.K. Choi, IEEE Trans. Electron. Devices. 56, 377–382 (2009)

M.J. Kang, K.-J. Baeg, D.J. Khim, Y.-Y. Noh, D.-Y. Kim, Adv. Funct. Mater. 23, 3503–3512 (2013)