Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

Advanced Functional Materials - Tập 21 Số 15 - Trang 2806-2829 - 2011
Byungjin Cho1, Sunghun Song1, Yongsung Ji1, Tae‐Wook Kim2, Takhee Lee1
1School of Materials Science and Engineering, Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju 500–712, Korea
2Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Jeollabuk-do 565–902, Korea

Tóm tắt

Abstract

In recent years, organic resistive memory devices in which active organic materials possess at least two stable resistance states have been extensively investigated for their promising memory potential. From the perspective of device fabrication, their advantages include simple device structures, low fabrication costs, and printability. Furthermore, their exceptional electrical performances such as a nondestructive reading process, nonvolatility, a high ON/OFF ratio, and a fast switching speed meet the requirements for viable memory technologies. Full understanding of the underlying physics behind the interesting phenomena is still challenging. However, many studies have provided useful insights into scientific and technical issues surrounding organic resistive memory. This Feature Article begins with a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented, which may open a way toward practically applicable organic memory devices.

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Thông tin
Thông tin xuất bản

Advanced Functional Materials

Tập 21 Số 15

2806-2829

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