Optoelectronic properties and plasma diagnostics of high deposition rate a-Si:H films using disilane

Luft, 1987, High rate deposition of hydrogenated amorphous silicon films and devices Knights, 1981, Appl. Phys. Lett., 38, 331, 10.1063/1.92359 Kenne, 1984, J. Appl. Phys., 55, 560, 10.1063/1.333063 Nishikawa, 1985, Jpn. J. Appl. Phys., 24, 639, 10.1143/JJAP.24.639 Hamasaki, 1984, Appl. Phys. Lett., 44, 600, 10.1063/1.94841 Kato, 1985, J. Non-Cryst. Solids, 77, 813, 10.1016/0022-3093(85)90784-7 Hudgens, 1985, J. Non-Cryst. Solids, 77, 809, 10.1016/0022-3093(85)90783-5 Itoh, 1984, 119 Sichanugrist, 1986, Jpn. J. Appl. Phys., 25, 440, 10.1143/JJAP.25.440