Optoelectronic Properties of a-Si:H Films Deposited from He-Diluted Silane
Tóm tắt
In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.
Tài liệu tham khảo
P. Roca i Cabarrocas, Y. Bouizem and M.L. Theye, Phil. Mag. B65, 1025 (1992)
H.-C. Neitzert and M. Kunst, Appl. Phys. A55, 378 (1992)
M. Kunst and H.-C. Neitzert, J. Appl. Phys. 69, 8320 (1991)
P. Grunow, D. Herrn, R. Könenkamp, U. Küppers, M. Kunst, H. C. Neitzert and A. Werner, Mat. Res. Soc. Symp. Proc. Vol. 149, 353 (1989)