Optical properties of Wurtzite-type semiconducting crystals near the isotropic point
Tóm tắt
Using Stahl’s coherent wave approach we calculated the linear interband susceptibility near the band gap. The starting point was the «MGM» formula with a smeared-out dipole densityM(r) and the Green’s functionG for the effective-mass Hamiltonian with a screened Coulomb potential. The susceptibility so obtained was used for calculating transmission spectra of CdS platelets for energies near the so-called isotropic point lying far below the nearest excitonic resonance. By fitting experimental spectra we determined components of the residual dielectric tensor for polarization of the incident beam perpendicular and parallel to thec-axis, the mixed-mode dipole moment corresponding toB-exciton, and decay radii characterizing transition dipole densities. The established set of parameters determines the dielectric tensor for a quite wide energetic range.
Tài liệu tham khảo
A. Stahl:Solid State Commun.,49, 91 (1984).
W. Huhn andA. Stahl:Phys. Status Solidi B,124, 167 (1984).
A. Stahl andI. Balslev:Electrodynamics of the Semiconductor Band Edge (Springer-Verlag, Berlin-Heidelberg, 1987).
G. Czajkowski andW. Chmara:Nuovo Cimento D,9, 1187 (1987).
I. Balslev andA. Stahl:Optics Commun.,65, 137 (1988).
A. Stahl:Z. Phys. B,72, 371 (1988).
J. Schlösser andA. Stahl:Phys. Status Solidi B,153, 773 (1989).
I. Balslev, R. Zimmermann andA. Stahl:Phys. Rev. B,40, 4095 (1989).
G. Czajkowski, Y. Chen andP. Schillak:Nuovo Cimento D,11, 839 (1989).
G. Czajkowski andP. Schillak:Nuovo Cimento D,11, 1535 (1989).
J. Schlösser, A. Stahl andI. Balslev:J. Phys. Condensed Matter,2, 5979 (1990).
V. M. Axt andA. Stahl:Solid State Commun.,77, 189 (1991).
W. Magnus, F. Oberhettinger andR. P. Soni:Formulas and Theorems for the Special Functions of Mathematical Physics (Springer-Verlag, Berlin-Heidelberg-New York, 1966).
C. H. Henry:Phys. Rev.,143, 627 (1966).
T. N. Dimov, I. A. Iliev andH. Lange:Phys. Status Solidi B,126, 261 (1984).
G. Czajkowski, K.-H. Pantke, K. Ziebegk andP. Schillak:J. Cryst. Growth,101, 379 (1990).
J. J. Hopfield andD. G. Thomas:Phys. Rev. Lett.,15, 22 (1965).
J. P. Laurenti, K. C. Rustagi andM. Rouzeyre:Appl. Phys. Lett.,28, 212 (1976).
J. P. Laurenti, K. C. Rustagi andM. Rouzeyre:J. Appl. Phys.,48, 203 (1977).
J. P. Laurenti andM. Rouzeyre:J. Appl. Phys.,52, 6484 (1981).
M. I. Strashnikova, V. Ya. Reznichenko, V. V. Cherny andV. N. Myasnikov:Solid State Commun.,47, 375 (1983).
I. A. Iliev, T. N. Dimov andH. Lange:Phys. Status Solidi B,128, K45 (1985)
M. I. Strashnikova, V. Ya. Reznichenko andV. V. Cherny:Phys. Status Solidi B,141, K 153 (1987).
V. Ya. Reznichenko, M. I. Strashnikova andV. V. Cherny:Ukr. Fiz. Zh.,33, 535 (1988).
K.-H. Pantke, I. Broser andK. Ziebergk: inOptical Nonlinearity and Bistability of Semiconductors, Berlin, August 22–25 1988, Abstract WeP-10.
G. Czajkowski andI. Balslev:Phys. Status Solidi B,130, 655 (1985).
Landolt-Börnstein: Vol.17,Semiconductors, Subvo. b:Physics of II–VI and I–VI Compounds, Semiconductors, edited byO. Madelung (Springer-Verlag, Berlin, Heidelberg, New York, 1982).