Optical and Electrical Characterization of Copper-and Chlorine-Doped Cadmium Zinc Telluride

Springer Science and Business Media LLC - Tập 487 - Trang 59-64 - 1997
J. E. Toney1, B. A. Brunett2, T. E. Schlesinger2, E. Cross3, F. P. Doty4, R. B. James3
1Department of Physics, Carnegie Mellon University, Pittsburgh, USA
2Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, USA
3Sandia National Laboratories, Livermore, USA
4Digirad Corp., San Diego, USA

Tóm tắt

We have used low-temperature photoluminescence spectroscopy and photo-induced current transient spectroscopy to study the properties of copper-doped Cd1-xZnxTe with x≈0.1 and chlorine-doped Cd1-xZnxTe with x=0.2, 0.35 and 0.5. The current-voltage characteristics and detector response were also measured. We observed variations in charge collection and resistivity in the Cu-doped samples which was correlated with variations in PICTS spectra. The Cl-doped material was found to have insufficient resistivity for detector operation.

Tài liệu tham khảo

K. Hjelt, M. Juvonen, T. Tuomi, S. Nenonen, E.E. Eissler and M. Bavdaz, phys. stat. sol (a) 162, p. 747 (1997) and references therein. B. Biglari, M. Samimi, M. Hage-Ali, J.M. Koebel and P. Siffert, Nucl. Instr. Meth. A 283, p. 249 (1989). M. Fiederle, D. Ebling, C. Eiche, D.M. Hofmann, M. Salk, W. Stadler, K.W. Benz, B.K. Meyer, J. Crystal Growth 138, p. 529 (1994). D.M. Hoffman, W. Stadler, K. Oettinger, B.K. Meyer, P. Omling, M. Salk, K.W. Benz, E. Weigel and G. Muller-Vogt, Mats. Sci. Eng. B 16, p. 128 (1993).