One-dimensional GaN nanomaterials transformed from one-dimensional Ga2O3 and Ga nanomaterials
Tóm tắt
One-dimensional (1D) GaN nanomaterials exhibiting various morphologies and atomic structures were prepared via ammoniation of either Ga2O3 nanoribbons, Ga2O3 nanorods or Ga nanowires filled into carbon nanotubes (CNTs). The 1D GaN nanomaterials transformed from Ga2O3 nanoribbons consisted of numerous GaN nanoplatelets having the close-packed plane, i.e. (0002)2H or (111)3C parallel to the axes of starting nanoribbons. The 1D GaN nanomaterials converted from Ga2O3 nanorods were polycrystalline rods covered with GaN nanoparticles along the axes. The 1D GaN nanomaterials prepared from Ga nanowires filled into CNTs displayed two dominant morphologies: (i) single crystalline GaN nanocolumns coated by CNTs, and (ii) pure single crystalline GaN nanowires. The cross-sectional shape of GaN nanowires were analyzed through the transmission electron microscopy (TEM) images. Formation mechanism of all-mentioned 1D GaN nanomaterials is then thoroughly discussed.
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