One-Dimensional (NH=CINH 3 ) 3 PbI 5 Perovskite for Ultralow Power Consumption Resistive Memory

Research - Tập 2021 - 2021
Xianlin Song1, Hao Yin1, Qing Chang1, Yuchi Qian1, Chongguang Lyu1, Huihua Min2, Xinrong Zong1, Chao Liu1, Yinyu Fang1, Zhengchun Cheng1, Tianshi Qin1, Wei Huang1,3, Lin Wang1
1Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China
2Electron Microscope Laboratory, Nanjing Forestry University, Nanjing 210037, China
3MIIT Key Laboratory of Flexible Electronics (KLoFE), Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Xi’an Key Laboratory of Flexible Electronics (KLoFE), Xi’an Key Laboratory of Biomedical Materials & Engineering, Xi’an Institute of Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi’an, 710072 Shaanxi, China

Tóm tắt

Organic-inorganic hybrid perovskites (OIHPs) have proven to be promising active layers for nonvolatile memories because of their rich abundance in earth, mobile ions, and adjustable dimensions. However, there is a lack of investigation on controllable fabrication and storage properties of one-dimensional (1D) OIHPs. Here, the growth of 1D (NH=CINH 3 ) 3 PbI 5 ((IFA) 3 PbI 5 ) perovskite and related resistive memory properties are reported. The solution-processed 1D (IFA) 3 PbI 5 crystals are of well-defined monoclinic crystal phase and needle-like shape with the length of about 6 mm. They exhibit a wide bandgap of 3 eV and a high decomposition temperature of 206°C. Moreover, the (IFA) 3 PbI 5 films with good uniformity and crystallization were obtained using a dual solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO). To study the intrinsic electric properties of this anisotropic material, we constructed the simplest memory cell composed of only Au/(IFA) 3 PbI 5 /ITO, contributing to a high-compacted device with a crossbar array device configuration. The resistive random access memory (ReRAM) devices exhibit bipolar current-voltage ( I-V ) hysteresis characteristics, showing a record-low power consumption of ~0.2 mW among all OIHP-based memristors. Moreover, our devices own the lowest power consumption and “set” voltage (0.2 V) among the simplest perovskite-based memory devices (inorganic ones are also included), which are no need to require double metal electrodes or any additional insulating layer. They also demonstrate repeatable resistance switching behaviour and excellent retention time. We envision that 1D OIHPs can enrich the low-dimensional hybrid perovskite library and bring new functions to low-power information devices in the fields of memory and other electronics applications.

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