On the validity of unintentional doping densities extracted using Mott–Schottky analysis for thin film organic devices
Tài liệu tham khảo
Kaji, 2009, Organic single-crystal schottky gate transistors, Advanced Materials, 21, 3689, 10.1002/adma.200900276
Braga, 2010, Organic metal-semiconductor field-effect transistor (OMESFET) fabricated on a rubrene single crystal, Advanced Materials, 22, 424, 10.1002/adma.200902124
Meijer, 2001, Frequency behavior and the Mott–Schottky analysis in poly(3-hexyl thiophene) metal–insulator–semiconductor diodes, Applied Physics Letters, 78, 3902, 10.1063/1.1378803
Lous, 1995, Schottky contacts on a highly doped organic semiconductor, Physical Review B, 51, 17251, 10.1103/PhysRevB.51.17251
Sze, 2007
Kim, 2011, Capacitive behavior of pentacene-based diodes: quasistatic dielectric constant and dielectric strength, Journal of Applied Physics, 109, 083710, 10.1063/1.3574661
Yogev, 2010, Local charge accumulation and trapping in grain boundaries of pentacene thin film transistors, Organic Electronics, 11, 1729, 10.1016/j.orgel.2010.07.021
Minakata, 1991, Highly ordered and conducting thin film of pentacene doped with iodine vapor, Journal of Applied Physics, 69, 7354, 10.1063/1.347594
Zhao, 2010, Remote doping of a pentacene transistor: control of charge transfer by molecular-level engineering, Applied Physics Letters, 97, 123305, 10.1063/1.3491429
Scheinert, 2003, Analyzes of field effect devices based on poly(3-octylthiophene), Synthetic Metals, 139, 501, 10.1016/S0379-6779(03)00205-4
Li, 2011, Simultaneous measurement of carrier density and mobility of organic semiconductors using capacitance techniques, Organic Electronics, 12, 1879, 10.1016/j.orgel.2011.08.002
Ogawa, 2005, Photoinduced doping effect of pentacene field effect transistor in oxygen atmosphere studied by displacement current measurement, Applied Physics Letters, 86, 252104, 10.1063/1.1949281
Ullah, 2009, Electrical response of highly ordered organic thin film metal–insulator–semiconductor devices, Journal of Applied Physics, 106, 114505, 10.1063/1.3267045
Takshi, 2007, Depletion width measurement in an organic Schottky contact using a metal–semiconductor field-effect transistor, Applied Physics Letters, 91, 083513, 10.1063/1.2773953
Kiguchi, 2003, Accumulation and depletion layer thicknesses in organic field effect transistors, Japanese Journal of Applied Physics, 42, L1408, 10.1143/JJAP.42.L1408
Kirchartz, 2012, Sensitivity of the Mott–Schottky analysis in organic solar cells, The Journal of Physical Chemistry C, 116, 7672, 10.1021/jp300397f
Shrotriya, 2005, Capacitance–voltage characterization of polymer light-emitting diodes, Journal of Applied Physics, 97, 054504, 10.1063/1.1857053
Sleiman, 2012, Pentacene-based metal–insulator–semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate, Applied Physics Letters, 100, 023302, 10.1063/1.3675856
Maruyama, 2011, Electrochemical characterization of pentacene thin films in vacuum with an ionic liquid as electrolyte, Applied Physics Express, 4, 051602, 10.1143/APEX.4.051602
Chan, 2008, N-doping of pentacene by decamethylcobaltocene, Applied Physics A, 95, 7, 10.1007/s00339-008-4997-x
Benor, 2007, Electrical stability of pentacene thin film transistors, Organic Electronics, 8, 749, 10.1016/j.orgel.2007.06.005
Kim, 2007, Observation of the hysteresis behavior of pentacene thin-film transistors in I–V and C–V measurements, Electrochemical and Solid-State Letters, 10, H1, 10.1149/1.2363950
Yang, 2002, Deep-level defect characteristics in pentacene organic thin films, Applied Physics Letters, 80, 1595, 10.1063/1.1459117
Mott, 1950
Sentaurus User Manual page 42–47 ver. A 2007.12 Synopsis Inc.
Diao, 2007, Electrical characterization of metal/pentacene contacts, Journal of Applied Physics, 101, 014510, 10.1063/1.2424396
Wondmagegn, 2011, Experimental and modeling study of the capacitance–voltage characteristics of metal–insulator–semiconductor capacitor based on pentacene/parylene, Thin Solid Films, 519, 4313, 10.1016/j.tsf.2011.02.014
