Observation and compositional studies of the metallic conducting filaments in the low-resistance state (ON-state) of SiO/V2O5 thin films used as memory elements
Tóm tắt
Memory elements of SiO/V2O5 co-evaporated thin films with copper or silver electrodes were studied in the scanning electron microscope. Electron probe microanalysis revealed the existence of metallic filaments in the dielectric material when it was in the ON-state and the resistance was typically in the range 2 to 60 Ω at room temperature. When the sample resistance was in the range 10 to 100 kΩ at room temperature and the sample was in the OFF-state, no structural changes in the sample were observed. The properties in the ON-state are consistent with the diffusion of metal from the electrodes during the foming process to form conducting filamentary paths.
Tài liệu tham khảo
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