OMVPE of GaN and AIN films by metal alkyls and hydrazine

Blaauw, 1984, J. Electrochem. Soc., 131, 1114, 10.1149/1.2115761 Cukauskas, 1985, J. Appl. Phys., 57, 2538, 10.1063/1.335442 Sekula, 1983, J. Appl. Phys., 54, 6517, 10.1063/1.331882 Pizzarello, 1975, J. Electron. Mater, 4, 25, 10.1007/BF02657834 Roehle, 1982, 63, 119 Matloubian, 1985, J. Electron. Mater., 14, 633, 10.1007/BF02654029 Osamura, 1972, Solid State Commun., 11, 617, 10.1016/0038-1098(72)90474-7 Osamura, 1975, J. Appl. Phys., 46, 3432, 10.1063/1.322064 Thurmond, 1972, J. Electrochem. Soc., 119, 622, 10.1149/1.2404274 Khan, 1983, Appl. Phys. Letters, 43, 492, 10.1063/1.94363 Karpinski, 1984, J. Crystal Growth, 66, 1, 10.1016/0022-0248(84)90070-8 Gotoh, 1981, Japan. J. Appl. Phys., 20, L545, 10.1143/JJAP.20.L545 Yoshida, 1983, Appl. Phys. Letters, 42, 427, 10.1063/1.93952 1980, F222 Schmidt, 1984 Christou, 1984, Appl. Phys. Letters, 44, 796, 10.1063/1.94889 Holm, 1977, J. Appl. Phys., 48, 212, 10.1063/1.323322 Manasevit, 1971, J. Electrochem. Soc., 118, 1864, 10.1149/1.2407853 Pankove, 1975 Kosiciki, 1970, Phys. Rev. Letters, 24, 1421, 10.1103/PhysRevLett.24.1421 Manchon, 1970, Solid State Commun., 8, 1227, 10.1016/0038-1098(70)90365-0 Sparks, 1978 Yoshida, 1983, Appl. Phys. Letters, 42, 427, 10.1063/1.93952 D.K. Gaskill, N. Bottka and M.C. Lin, Appl. Phys. Letters, in press. Yoshida, 1985, J. Electrochem. Soc., 132, 677, 10.1149/1.2113929 A. Berry, Naval Research Laboratory, Washington, DC, private communication, 1986.