Chand, N., Houston, P.A.: Diffusion of Cd and Zn in InP between 550 and \(650^{\circ }\)C. J. Electron Mater. 11, 37–51 (1982)
D’Orsogna, D., Tobin, S.P., et al.: Numerical analysis of a very long-wavelength HgCdTe pixel array for infrared detection. J. Electron. Mater. 37, 1349–1355 (2008)
Dlubek, G., Brummer, O., et al.: Vacancy Zn complexes in InP studied by positrons. Appl. Phys. Lett. 46, 1136–1138 (1985)
Gisin, N., Ribordy, G., Tittel, W., Zbinden, H.: Quantum cryptography. Rev. Mod. Phys. 74, 145–195 (2002)
Jiang, X., Itzler, M.A., Ben-Michael, R., Slomkowski, K.: InGaAs-InP avalanche photodiodes For single photon detection. IEEE Sel. Topics in Quantum Electron. 13, 895–905 (2007)
Ogura, M., Mizuta, M., Hase, N., Kukimoto, H.: Deep levels in InP grown by MOCVD. Jpn. J. Appl. Phys. 22, 658–662 (1983)
Pellegrini, S., Warburton, R.E., et al.: Desing and performance of an InGaAs-InP single photon avalanche diode detector. IEEE J. Quantum Electron. 42, 397–403 (2006)
Singh, A., Anderson, W.A.: Deep-level transient spectroscopy studies of near-surface hole and electron traps in Zn-doped InP using high barrier Yb/p-InP Schottky diodes. J. Appl. Phys. 64, 3999–4002 (1988)
Sugihara, K., Yagyu, E., Tokuda, Y.: Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger Mode. J. Appl. Phys 99, 124502-1–124502-5 (2006)
Tuck, B., Hooper, A.: Diffusion profiles of Zinc in indium phosphide. J. Phys. D Appl. Phys. 8, 1806–1821 (1975)
Wada, O., Majerfeld, A., et al.: Interaction of deep-level traps with the lowest and upper conduction minima in In P. J. Appl. Phys. 51, 423–432 (1980)
Wang, W.J., Lin, L., Li, T.X., et al.: Numerical analysis of single photon avalanche photodiodes with improved structure. In NUSOD’10th International Conference 10, 19–20 (2010)