Numerical Analysis of X-Ray Diffraction Reflection Spectra of AlGaAs/GaAs Superlattices Depending on Structural Parameters

Journal of Communications Technology and Electronics - Tập 66 - Trang 348-353 - 2021
D. V. Ilinov1, A. D. Shabrin1, A. E. Goncharov1, D. A. Pashkeev1,2
1JSC Research and Development Association Orion, Moscow, Russia
2Russian Technological University (MIREA), Moscow, Russia

Tóm tắt

In this paper, we study the properties of X-ray diffraction reflection spectra of multilayer periodic AlGaAs/GaAs heterostructures depending on the thickness and composition of the layer material and number of periods. The number and intensity of additional diffraction maxima on the rocking curves are shown to increase with an increase in the layer thickness and number of periods. The layer composition does not affect the number of maxima but changes their angular position and the full width at half maximum. Numerical calculations were compared with experimental spectra measured for a heterostructure grown by molecular beam epitaxy and consisting of 50 periods in which the AlxGa1–xAs barrier had a composition of x ≈ 26.7% and a thickness of d ≈ 51.6 nm while the GaAs quantum well had a thickness of d ≈ 4.6 nm. The calculated parameters are found to be in good agreement with the technological data and the results of transmission electron microscope measurements.

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Thông tin xuất bản

Journal of Communications Technology and Electronics

Tập 66

348-353

Thông tin tác giả