Novel high-Q × f (1 − x)CeO2–xCaF2 (0.2 ≤ x ≤ 0.6) microwave dielectric ceramics sintered at medium temperatures
Tóm tắt
In this work, a new binary microwave dielectric ceramic system of (1 − x)CeO2–xCaF2 (0.2 ≤ x ≤ 0.6) was fabricated at medium sintering temperatures. The compositional effects of on the sintering behavior, phase compositions, microstructures, and microwave dielectric properties of the samples were studied. High relative density levels (> 95%) were achieved in the (1 − x)CeO2–xCaF2 samples at the sintering temperatures ranging from 1100 to 1350 °C. An increase in the content of CaF2 resulted in a decrease in the dielectric constant, an increase in the Q × f level, and a negative shift of the τf value. The optimal microwave dielectric properties of εr = 11.3, Q × f = 53,000 GHz, and τf = − 102 ppm/°C were obtained in the sample of (1 − x)CeO2–xCaF2 with x = 0.6 when sintered at 1300 °C.
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