Noise source modeling for cyclostationary noise analysis in large-signal device operation

IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1640-1647 - 2002
F. Bonani1, S.D. Guerrieri2, G. Ghione1
1Dipartimento di Elettronica and INFM Unità Torino Politecnico, Politecnico di Torino, Turin, Italy
2Dipartimento di Elettronica, Politecnico di Torino, Turin, Italy

Tóm tắt

Starting from the analysis of fundamental noise sources in large-signal (LS) periodic operation, a system theory approach is proposed for the modeling of colored noise sources in devices and circuits driven in LS conditions. According to this interpretation, colored sources are generated by low-pass filtering and amplitude modulation of a white unit Gaussian process. The order of the modulation and filtering steps leads to two different (albeit coincident in small-signal conditions) LS noise sources. Through the analysis of GR noise in physics-based device simulation, it is shown that only one modulation scheme (based on low-pass filtering followed by amplitude modulation) is consistent with the fundamental approach. This result also applies to 1/f noise mechanisms when 1/f fluctuations derive from population fluctuations.

Từ khóa

#Semiconductor device noise #Semiconductor device modeling #Current density #White noise #Gaussian noise #Random noise #Superconducting microwave devices

Tài liệu tham khảo

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