Nitrogen‐Doped Ti3C2 MXene: Mechanism Investigation and Electrochemical Analysis

Advanced Functional Materials - Tập 30 Số 47 - 2020
Chengjie Lu1, Yang Li1, Bingzhen Yan1, Liangbo Sun2, Peigen Zhang1, Wei Zhang1, ZhengMing Sun1
1School of Materials Science and Engineering, Southeast University, Nanjing, 211189, P. R. China
2Center of Analysis and Measurement, Harbin Institute of Technology, Harbin, 150001 P. R. China

Tóm tắt

Abstract

Nitrogen doping has been proven to be a facile modification strategy to improve the electrochemical performance of 2D MXenes, a group of promising candidates for energy storage applications. However, the underlying mechanisms, especially the positions of nitrogen dopants, and its effect on the electrical properties of MXenes, are still largely unexplored. Herein, a comprehensive study is carried out to disclose the nitrogen doping mechanism in Ti3C2 MXene, by employing theoretical simulation and experimental characterization. Three possible sites are found in Ti3C2Tx (T = F, OH, and O) to accommodate the nitrogen dopants: lattice substitution (for carbon), function substitution (for –OH), and surface absorption (on –O). Moreover, electrochemical test results confirm that all the three kinds of nitrogen dopants are favorable for improving the specific capacitance of the Ti3C2 electrode, and the underlying factors are successfully distinguished. By revealing the nitrogen doping mechanisms in Ti3C2 MXene, this work provides theoretical guidelines for modulating the electrochemical properties of MXene materials for energy storage applications.

Từ khóa


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Advanced Functional Materials

Tập 30 Số 47

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