Nanowires for Integrated Multicolor Nanophotonics

Small - Tập 1 Số 1 - Trang 142-147 - 2005
Yu Huang1, Xiangfeng Duan1, Charles M. Lieber1
1Department of Chemistry and Chemical Biology, Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA

Tóm tắt

AbstractNanoscale light‐emitting diodes (nanoLEDs) with colors spanning from the ultraviolet to near‐infrared region of the electromagnetic spectrum were prepared using a solution‐based approach in which emissive electron‐doped semiconductor nanowires were assembled with nonemissive hole‐doped silicon nanowires in a crossed nanowire architecture. Single‐ and multicolor nanoLED devices and arrays were made with colors specified in a predictable way by the bandgaps of the III–V and II–VI nanowire building blocks. The approach was extended to combine nanoscale electronic and photonic devices into integrated structures, where a nanoscale transistor was used to switch the nanoLED on and off. In addition, this approach was generalized to hybrid devices consisting of nanowire emitters assembled on lithographically patterned planar silicon structures, which could provide a route for integrating photonic devices with conventional silicon microelectronics. Lastly, nanoLEDs were used to optically excite emissive molecules and nanoclusters, and hence could enable a range of integrated sensor/detection “chips” with multiplexed analysis capabilities.

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