Nanoscale structural parameters based analytical model for GaN HEMTs

Meneghesso, 2008, Reliability of GaN high electron-mobility transistors: state of the art and perspectives, IEEE Trans. Device Mater. Reliab., 8, 332, 10.1109/TDMR.2008.923743 Kumar, 2002, AlGaN/GaN HEMTs on SiC with f/sub T/of over 120 GHz, IEEE Electron. Device Lett., 23, 455, 10.1109/LED.2002.801303 Wu, 2001, Very-high power density AlGaN/GaN HEMTs, IEEE Trans. Electron Devices, 48, 586, 10.1109/16.906455 Tang, 2015, Ultrahigh-speed. GaN high-electron-mobility transistors with fT/fmax of 454/444 GHz, IEEE Electron. Device Lett., 36, 549, 10.1109/LED.2015.2421311 Madhulika, 2017, Influence of barrier and spacer layer on structural and electrical properties of AlGaN/GaN HEMT, 1 Angelov, 1992, A new empirical nonlinear model for HEMT and MESFET devices, IEEE Trans. Microw. Theory Tech., 40, 2258, 10.1109/22.179888 Delagebeaudeuf, 1982, Metal-(n) AlGaAs-GaAs two dimensional electron gas FET, IEEE Trans. Electron Devices, 29, 955, 10.1109/T-ED.1982.20813 Li, 2008, 2-D analytical model for current–voltage characteristics and transconductance of AlGaN/GaN MODFETs, IEEE Trans. Electron Devices, 55, 261, 10.1109/TED.2007.911076 Koudymovi, 2008, Analytical HFET I–V model in presence of current collapse, IEEE Trans. Electron Devices, 55, 712, 10.1109/TED.2007.915092 Yigletu, 2013, Compact charge-based physical models for current and capacitances in AlGaN/GaN HEMTs, IEEE Trans. Electron Devices, 60, 3746, 10.1109/TED.2013.2283525 Dasgupta, 2016, Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model, 1 Radhakrishna, 2014, MIT virtual source GaNFET-RF compact model for GaN HEMTs: from device physics to RF frontend circuit design and validation, 1161 Zhang, 2014, A compact model for generic MIS-HEMTs based on the unified 2DEG density expression, IEEE Trans. Electron Devices, 61, 314, 10.1109/TED.2013.2295400 Raszhmi, 2002, An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs, Solid State Electron., 46, 621, 10.1016/S0038-1101(01)00332-X Khandelwal, 2012, A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices, Solid State Electron., 76, 60, 10.1016/j.sse.2012.05.054 Khandelwal, 2012, A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices, 1 Lu, 2015, Correlation between band gap, dielectric constant, Young's modulus and melting temperature of GaN nanocrystals and their size and shape dependences, Sci. Rep., 5, 10.1038/srep16939 Wu, 2015, Thickness-dependent dielectric constant of few-layer In2Se3 nano-flakes, Nano Lett., 15, 8136, 10.1021/acs.nanolett.5b03575 Roduner, 2006, Size matters: why nanomaterials are different, Chem. Soc. Rev., 35, 583, 10.1039/b502142c Guisbiers, 2010, Size-dependent materials properties toward a universal equation, Nanoscale Res. Lett., 5, 1132, 10.1007/s11671-010-9614-1 Delerue, 2003, Concept of dielectric constant for nanosized systems, Phys. Rev. B, 68, 10.1103/PhysRevB.68.115411 Bahat-Treidel, 2012 Ping, 1998, DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates, IEEE Electron. Device Lett., 19, 54, 10.1109/55.658603 Lee, 1983, Current-voltage and capacitance-voltage characteristics of modulation-doped field-effect transistors, IEEE Trans. Electron Devices, 30, 207, 10.1109/T-ED.1983.21101 Du, 2014, Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model, J. Appl. Phys., 115, 10.1063/1.4873975 Zhou, 2014, Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs, Solid State Electron., 100, 15, 10.1016/j.sse.2014.06.040 Kwon, 1999, Radiative recombination of two dimensional electrons in a modulation doped AlGaN/GaN single heterostructure, Appl. Phys. Lett., 75, 2788, 10.1063/1.125150 Syamal, 2016, A comprehensive compact model for GaN HEMTs, including quasi-steady-state and transient trap-charge effects, IEEE Trans. Electron Devices, 63, 1478, 10.1109/TED.2016.2533165 2016 Khandelwal, 2011, A physics based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices, IEEE Trans. Electron Devices, 58, 3622, 10.1109/TED.2011.2161314 Lime, 2008, A quasi-two-dimensional compact drain–current model for undoped symmetric double-gate MOSFETs including short-channel effects, IEEE Trans. Electron Devices, 55, 1441, 10.1109/TED.2008.921980 Zhang, 2001, Melting temperatures of semiconductor nanocrystals in the mesoscopic size range, Semicond. Sci. Technol., 16, 10.1088/0268-1242/16/6/101 Ghosh, 2016, Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs, 247 Drummond, 1982, Transport in modulation-doped structures (Alx Ga1-xAs/GaAs) and correlations with Monte Carlo calculations (GaAs), Appl. Phys. Lett., 41, 277, 10.1063/1.93500 Fang, 2012, Effect of optical phonon scattering on the performance of GaN transistors, IEEE Electron. Device Lett., 33, 709, 10.1109/LED.2012.2187169 Sasikumar, 2013, Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy, Appl. Phys. Lett., 103, 10.1063/1.4813862 Dhar, 1986, A detailed investigation of the D-X center and other trap levels in GaAs-AlxGa1-xAs modulation-doped heterostructures grown by molecular-beam epitaxy, IEEE Trans. Electron Devices, ED, 33, 698, 10.1109/T-ED.1986.22554 Chan, 1994, Trap Studies in GaInP/GaAs and AlGaAs/GaAs HEMT's by means of low- frequency noise and transconductance dispersion characterizations, IEEE Trans. Electron Devices, 41, 637, 10.1109/16.285009 Meneghesso, 2010, Reliability issues of gallium nitride high electron mobility transistors, Int. J. Microw. Wirel. Technol., 2, 39, 10.1017/S1759078710000097 Sanchez, 1991, Five-valley model for the study of electron transport properties at very high electric fields in GaAs, Semicond. Sci. Technol., 6, 862, 10.1088/0268-1242/6/9/005 O'Leary, 1997, Electron transport in wurtzite indium nitride, J. Appl. Phys., 83, 826, 10.1063/1.366641 Iqbal, 2018, Reactive sputtering of aluminum nitride (002) thin films for piezoelectric applications: a review, Sensors, 18, 1797, 10.3390/s18061797