Nanoscale device modeling: the Green’s function method

2000

Collier, 1999, Science, 285, 391, 10.1126/science.285.5426.391

Chen, 1999, Science, 286, 1550, 10.1126/science.286.5444.1550

Lake, 1997, J. Appl. Phys., and references therein, 81, 7845, 10.1063/1.365394

Vasileska, 1997, IEEE Trans. Electron Devices, 44, 584, 10.1109/16.563362

Parr, 1989

Datta, 1997

Imry, 1997

Ferry, 1997

R. F. Pierret, Advanced Semiconductor Fundamentals, Addison-Wesley, 57

Mahan, 1987, Phys. Rep., 145, 251, 10.1016/0370-1573(87)90004-4

Danielewicz, 1984, Ann. Phys., and references therein. These references deal with bulk conductors and do not explicitly treat the contacts. The use of self-energy functions to represent the contacts can be traced back to, 152, 239

Caroli, 1972, J. Phys. C, and has been discussed in Chapter 3 of Ref. ., 5, 21

Tian, 1997, J. Chem. Phys., and references therein, 109, 2874, 10.1063/1.476841

Anantram, 1998, Phys. Rev., B58, 4882, 10.1103/PhysRevB.58.4882

Kadanoff, 1962

Z. Ren, M. S. Lundstrom

J, op, sp, 3, s, *

Lake, 1992, Phys. Rev., B46, 4757, 10.1103/PhysRevB.46.4757

McLennan, 1991, Phys. Rev., B43, 13846, 10.1103/PhysRevB.43.13846

Buttiker, 1986, Phys. Rev., B33, 3020, 10.1103/PhysRevB.33.3020