Nanoporous structures of polyimide induced by Ar ion beam irradiation

Applied Surface Science - Tập 258 - Trang 3841-3845 - 2012
Sk. Faruque Ahmed1, Kwang-Ryeol Lee1, Ju-il Yoon2, Myoung-Woon Moon1
1Interdisciplinary and Fusion Technology Division, Korea Institute of Science and Technology, 136-791, Seoul, Republic of Korea
2Mechanical System Engineering, Hansung University, 136-792, Seoul, Republic of Korea

Tài liệu tham khảo

1996 Wu, 2010, J. Nanosci. Nanotechnol., 10, 6446, 10.1166/jnn.2010.2618 Choi, 2008, Prog. Polym. Sci., 33, 581, 10.1016/j.progpolymsci.2007.11.004 Ghosh, 1997, J. Adhes. Sci. Technol., 11, 877, 10.1163/156856197X00967 Ogawa, 2006, J. Appl. Polym. Sci., 100, 3403, 10.1002/app.23800 Baba, 1999, Jpn. J. Appl. Phys., 38, L261, 10.1143/JJAP.38.L261 Shimamura, 2009, Polym. Degrad. Stab., 94, 1389, 10.1016/j.polymdegradstab.2009.05.013 Kim, 2006, Met. Mater. Int., 12, 425, 10.1007/BF03027710 Moon, 2009, Nanotechnology, 20, 115301, 10.1088/0957-4484/20/11/115301 Kucheyev, 2004, Appl. Phys. Lett., 85, 733, 10.1063/1.1776618 Shin, 2010, Macromol. Res., 18, 227, 10.1007/s13233-010-0310-x Ensinger, 2007, Surf. Coat. Technol., 201, 8442, 10.1016/j.surfcoat.2006.03.060 Ahmed, 2010, Surf. Coat. Technol., 205, L104, 10.1016/j.surfcoat.2010.06.005 Hnatowicz, 2007, Nucl. Instr. Meth. Phys. Res. B, 175, 437 Ziegler, 1999, J. Appl. Phys., 85, 1249, 10.1063/1.369844 Ahmed, 2009, Plasma Proc. Polym., 6, 860, 10.1002/ppap.200932202 Ahmed, 2010, Appl. Phys. Lett., 97, 081908, 10.1063/1.3481417 Moon, 2007, Proc. Natl. Acad. Sci. U.S.A., 104, 1130, 10.1073/pnas.0610654104 Fink, 1994, Rad. Eff. Def. Solids, 132, 313, 10.1080/10420159408219984 Ektessabi, 2000, Thin Solid Films, 377–378, 621, 10.1016/S0040-6090(00)01444-9 Mishra, 2003, Rad. Meas., 36, 621, 10.1016/S1350-4487(03)00212-9 Chen, 2008, Nucl. Instr. Meth. Phys. Res. B, 266, 3091, 10.1016/j.nimb.2008.03.168 Dong, 1999, Surf. Coat. Technol., 111, 29, 10.1016/S0257-8972(98)00698-7 Shah, 2003, Rad. Meas., 36, 699, 10.1016/S1350-4487(03)00229-4 Kim, 2002, Polym. Int., 51, 1063, 10.1002/pi.948