Nanometer-thick amorphous-SnO2 layer as an oxygen barrier coated on a transparent AZO electrode
Tóm tắt
It is necessary for transparent conducting electrodes used in dye-sensitized or perovskite solar cells to have high thermal stability which is required when TiO2 is coated on the electrode. AZO films with their low-cost and good TCO properties are unfortunately unstable above 300 °C in air because of adsorbed oxygen. In this paper, the thermal stability of AZO films is enhanced by depositing an oxygen barrier on AZO films to block the oxygen. As the barrier material, SnO2 is used due to its high heat stability, electrical conductivity, and transmittance. Moreover, when the SnO2 is grown as amorphous phase, the protective effect become greater than the crystalline phase. The thermal stability of the amorphous-SnO2/AZO films varies depending on the thickness of the amorphous SnO2 layer. Because of the outstanding oxygen blocking properties of amorphous SnO2, its optimal thickness is very thin and it results in only a slight decrease in transmittance. The sheet resistance of the amorphous-SnO2/AZO film is 5.4 Ω sq−1 after heat treatment at 500 °C for 30 min in air and the average transmittance in the visible region is 83.4%. The results show that the amorphous-SnO2/AZO films have thermal stability with excellent electrical and optical properties.
Tài liệu tham khảo
C. A. Hoel, T. O. Mason, J.-F. Gaillard, and K. R. Poeppelmeier, Chem. Mater. 22, 3569 (2010).
J. Ravichandran, W. Siemons, H. Heijmerikx, M. Huijben, A. Majumdar, and R. Ramesh, Chem. Mater. 22, 3983 (2010).
A. R. Nagaraja, K. H. Stone, M. F. Toney, H. Peng, S. Lany, and T. O. Mason, Chem. Mater. 26, 4598 (2014).
A. Nadarajah, M. E. Carnes, M. G. Kast, D. W. Johnson, and S. W. Boettcher, Chem. Mater. 25, 4080 (2013).
S. Bae, H. Kim, Y. Lee, X. Xu, J.-S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. R. Kim, Y. Il Song, Y.-J. Kim, K. S. Kim, B. Ozyilmaz, J.-H. Ahn, B. H. Hong, and S. Iijima, Nat. Nanotechnol. 5, 574 (2010).
B. T. Diroll, T. R. Gordon, E. A. Gaulding, D. R. Klein, T. Paik, H. J. Yun, E. D. Goodwin, D. Damodhar, C. R. Kagan, and C. B. Murray, Chem. Mater. 26, 4579 (2014).
B. Thestrup and J. Schou, Appl. Phys. A-Mater. 69, S807 (1999).
Y. Kim, I. Lee, Y. Song, M. Lee, B. Kim, N. Cho, and D. Y. Lee, Electron. Mater. Lett. 10, 445 (2014).
A. Hagfeldt, G. Boschloo, L. Sun, L. Kloo, and H. Pettersson, Chem. Rev. 110, 6595 (2010).
B. Yoo, K. Kim, D.-K. Lee, M. J. Ko, H. Lee, Y. H. Kim, W. M. Kim, and N.-G. Park, J. Mater. Chem. 20, 4392 (2010).
H. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, Superlattice. Microst. 48, 458 (2010).
T. Minami, H. Nanto, S. Shooji, and S. Takata, Thin Solid Films 111, 167 (1984).
G. H. Kim, D. H. Hwang, and S. I. Woo, Mater. Chem. Phys. 131, 77 (2011).
J. H. He, C. S. Lao, L. J. Chen, D. Davidovic, and Z. L. Wang, J. Am. Chem. Soc. 127, 16376 (2005).
H. Damm, P. Adriaensens, C. De Dobbelaere, B. Capon, K. Elen, J. Drijkoningen, B. Conings, J. V. Manca, J. D’Haen, C. Detavernier, P. C. M. M. Magusin, J. Hadermann, A. Hardy, and M. K. Van Bael, Chem. Mater. 26, 5839 (2014).
J. Schoenes, K. Kanazawa, and E. Kay, J. Appl. Phys. 48, 2537 (1977).
H. Tong, Z. Deng, Z. Liu, C. Huang, J. Huang, H. Lan, C. Wang, and Y. Cao, Appl. Surf. Sci. 257, 4906 (2011).
T. Gui, L. Hao, J. Wang, L. Yuan, W. Jia, and X. Dong, Chin. Opt. Lett. 8, 134 (2010).
T. Minami, T. Miyata, and T. Yamamoto, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film. 17, 1822 (1999).
H. Geistlinger, J. Appl. Phys. 80, 1370 (1996).
H. Hosono, M. Yasukawa, and H. Kawazoe, J. Non. Cryst. Solids 203, 334 (1996).
T. Szörényi, L. D. Laude, I. Bertóti, Z. Kántor, and Z. Geretovszky, J. Appl. Phys. 78, 6211 (1995).
I. H. Kim, J. H. Ko, D. Kim, K. S. Lee, T. S. Lee, J.-H. Jeong, B. Cheong, Y.-J. Baik, and W. M. Kim, Thin Solid Films 515, 2475 (2006).
J. Jeon, T. Gong, Y. Kong, H. M. Lee, and D. Kim, Electron. Mater. Lett. 11, 481 (2015).