Nano-indentation study of dislocation evolution in GaN-based laser diodes
Tóm tắt
Từ khóa
Tài liệu tham khảo
Pearton SJ, Zolper JC, Shul RJ, et al. GaN: processing, defects, and devices. J Appl Phys. 1999;86:1–78.
Islam N, Mohamed MFP, Khan MFAJ, et al. Reliability, applications and challenges of GaN HEMT technology for modern power devices: a review. Crystals. 2022;12:1581.
Wen P, Zhang S, Liu J, et al. Investigation of InGaN/GaN laser degradation based on luminescence properties. J Appl Phys. 2016;119:213107.
Godlewski M, Phillips MR, Kazlauskas K, et al. Profiling of light emission of GaN-based laser diodes with cathodoluminescence. Physica Status Solidi (A). 2006;203:1811–4.
Feng M, Liu J, Sun Q, et al. III-nitride semiconductor lasers grown on Si. Prog Quantum Electron. 2021;77:100323.
Tang Y, Feng M, Wen P, et al. Degradation study of InGaN-based laser diodes grown on Si. J Phys D Appl Phys. 2020;53:395103.
Hsu PS, Hardy MT, Young EC, et al. Stress relaxation and critical thickness for misfit dislocation formation in (10–10) and (30–31) InGaN/GaN heteroepitaxy. Appl Phys Lett. 2012;100:171917.
Iwaya M, Yamamoto T, Iida D, et al. Relationship between misfit-dislocation formation and initial threading-dislocation density in GaInN/GaN heterostructures. Jpn J Appl Phys. 2015;54:115501.
Li ZH, Shao PF, Wu YZ, et al. Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates. Jpn J Appl Phys. 2021;60:075504.
Floro JA, Follstaedt DM, Provencio P, et al. Misfit dislocation formation in the AlGaN/GaN heterointerface. J Appl Phys. 2004;96:7087–94.
Srinivasan S, Geng L, Liu R, et al. Slip systems and misfit dislocations in InGaN epilayers. Appl Phys Lett. 2003;83:5187–9.
Liu R, Mei J, Srinivasan S, et al. Generation of misfit dislocations by basal-plane slip in InGaN∕GaN heterostructures. Appl Phys Lett. 2006;89:201911.
Caldas PG, Silva EM, Prioli R, et al. Plasticity and optical properties of GaN under highly localized nanoindentation stress fields. J Appl Phys. 2017;121:125105.
Krimsky E, Jones KA, Tompkins RP, et al. Nano-indentation used to study pyramidal slip in GaN single crystals. J Appl Phys. 2018;123:065701.
Huang J, Xu K, Fan YM, et al. Nanoscale anisotropic plastic deformation in single crystal GaN. Nanoscale Res Lett. 2012;7:150.
Huang J, Xu K, Fan YM, et al. Dislocation luminescence in GaN single crystals under nanoindentation. Nanoscale Res Lett. 2014;9:649.
Tomiya S, Hino T, Goto S, et al. Dislocation related issues in the degradation of GaN-based laser diodes. IEEE J Sel Top Quantum Electron. 2004;10:1277–86.
Godlewski M, Bożek R, Miasojedovas S, et al. Micro-analysis of light emission properties of GaN-based laser diodes. Physica Status Solidi C. 2007;4:2818–21.
Mei J, Liu R, Ponce FA, et al. Basal-plane slip in InGaN/GaN heterostructures in the presence of threading dislocations. Appl Phys Lett. 2007;90:171922.
Martín-Martín A, Iñiguez P, Jiménez J, et al. Role of the thermal boundary resistance of the quantum well interfaces on the degradation of high power laser diodes. J Appl Phys. 2011;110:033113.
Fan S, Liu R, Huang Y, et al. Observation of threading dislocations and misfit dislocation half-loops in GaN/AlGaN heterostructures grown on Si using electron channeling contrast imaging. J Appl Phys. 2022;132:105302.
Wang HM, Zhang JP, Chen CQ, et al. AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire. Appl Phys Lett. 2002;81:604–6.