Monolithic SOI through-wafer Knudsen pumps with mechanically robust Si channels
Tài liệu tham khảo
Knudsen, 1909, Eine revision der gleichgewichtsbedingung der gase. Thermische molekularströmung, Ann. der Phys., vol. 336, 205, 10.1002/andp.19093360110
Knudsen, 1910, Thermischer molekulardruck der gase in röhren, Ann. der Phys., vol. 338, 1435, 10.1002/andp.19103381618
Sharipov, 1999, Non-isothermal gas flow through rectangular microchannels, J. Micromech. Microeng., vol. 9, 394, 10.1088/0960-1317/9/4/317
Akhlaghi, 2023, A comprehensive review on micro-and nano-scale gas flow effects: Slip-jump phenomena, Knudsen paradox, thermally-driven flows, and Knudsen pumps, Phys. Rep., vol. 997, 1, 10.1016/j.physrep.2022.10.004
An, 2015, A monolithic high-flow Knudsen pump using vertical Al2O3 channels in SOI, J. Microelectromech. Syst., vol. 24, 1606, 10.1109/JMEMS.2015.2426699
An, 2013, A Si-micromachined 162-stage two-part Knudsen pump for on-chip vacuum, J. Microelectromech. Syst., vol. 23, 406, 10.1109/JMEMS.2013.2281316
Au, 2011, Microvalves and micropumps for BioMEMS, Micromachines, vol. 2, 179, 10.3390/mi2020179
Bell, 2013, Scavenged body heat powered infusion pump, J. Micromech. Microeng., vol. 23, 10.1088/0960-1317/23/11/114019
Liu, 2011, Demonstration of motionless Knudsen pump based micro-gas chromatography featuring micro-fabricated columns and on-column detectors, Lab Chip, vol. 11, 3487, 10.1039/c1lc20511k
Qin, 2016, A fully electronic microfabricated gas chromatograph with complementary capacitive detectors for indoor pollutants, Microsyst. Nanoeng., vol. 2, 15049, 10.1038/micronano.2015.49
Liao, 2023, Highly integrated μGC based on a multisensing progressive cellular architecture with a valveless sample inlet, Anal. Chem., vol. 95, 2157, 10.1021/acs.analchem.2c01818
Mitra, 1996, Characteristics of microtrap-based injection systems for continuous monitoring of volatile organic compounds by gas chromatography, J. Chromatogr. A, vol. 727, 111, 10.1016/0021-9673(95)01062-9
Gupta, 2011, Porous ceramics for multistage Knudsen micropumps—modeling approach and experimental evaluation, J. Micromech. Microeng., vol. 21, 10.1088/0960-1317/21/9/095029
Pharas, 2010, Knudsen pump driven by a thermoelectric material, J. Micromech. Microeng., vol. 20, 10.1088/0960-1317/20/12/125032
Gupta, 2011, Thermal transpiration in mixed cellulose ester membranes: enabling miniature, motionless gas pumps, Microporous Mesoporous Mater., vol. 142, 535, 10.1016/j.micromeso.2010.12.042
Faiz, 2014, Nanoporous Bi2Te3 thermoelectric based Knudsen gas pump, J. Micromech. Microeng., vol. 24, 10.1088/0960-1317/24/3/035002
Nakaye, 2016, Demonstration of a gas separator composed of Knudsen pumps, Vacuum, vol. 125, 154, 10.1016/j.vacuum.2015.12.015
Byambadorj, 2021, A monolithic Si-micromachined four-stage Knudsen pump for µGC applications, J. Micromech. Microeng., vol. 31, 10.1088/1361-6439/abd264
T. Byambadorj, Y. Qin, Y.B. Gianchandani, Blocking Pressure Enhancement in SOI Through-Wafer Monolithic Knudsen Pumps, IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Tokyo, Japan, pp. 43–46, 2022.
Q. Cheng, Miniaturized Knudsen Pumps for Micro Gas Chromatography and Other Applications, Ph.D. dissertation, Dept. Mech. Eng., University of Michigan, Ann Arbor, MI, USA, 2019.
S. An, Y. Qin, Y.B. Gianchandani, A monolithic Knudsen pump with 20 sccm flow rate using through-wafer ONO channels, IEEE International Conference on Micro Electro Mechanical Systems (MEMS), San Francisco, CA, pp. 112–115, 2014.
Guckel, 1985, A simple technique for the determination of mechanical strain in thin films with applications to polysilicon, J. Appl. Phys., vol. 57, 1671, 10.1063/1.334435
Guckel, 1992, Diagnostic microstructures for the measurement of intrinsic strain in thin films, J. Micromech. Microeng., vol. 2, 86, 10.1088/0960-1317/2/2/004
Sinha, 1978, Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates, J. Appl. Phys., vol. 49, 2423, 10.1063/1.325084
Elbrecht, 1997, Comparison of stress measurement techniques in surface micromachining, J. Micromech. Microeng., vol. 7, 151, 10.1088/0960-1317/7/3/019
B. Wagner, H.J. Quenzer, S. Hoerschelmann, T. Lisec, M. Juerss, Bistable microvalve with pneumatically coupled membranes, IEEE International Workshop on Micro Electromechanical Systems, San Diego, CA, USA, pp. 384–388, 1996.
Merle, 2011, Fracture toughness of silicon nitride thin films of different thicknesses as measured by bulge tests, Acta Mater., vol. 59, 1772, 10.1016/j.actamat.2010.11.043
Popescu, 1994, Buckled membranes for microstructures, IEEE Micro Electro Mechanical Systems An Investigation of Micro Structures, Sensors, Actuators, Machines and Robotic Systems, Oiso, Japan, 188, 10.1109/MEMSYS.1994.555621
Wang, 2016, Graphene “microdrums” on a freestanding perforated thin membrane for high sensitivity MEMS pressure sensors, Nanoscale, vol. 8, 7663, 10.1039/C5NR09274D
P. Meijers, Doubly-Periodic Stress Distributions in Perforated Plates, Ph.D. dissertation, Delft University of Technology, Delft, Netherlands, 1967.
Chen, 2020, Stress analysis and characterization of PECVD oxide/nitride multi-layered films after thermal cycling, IEEE Trans. Device Mater. Reliab., vol. 21, 17, 10.1109/TDMR.2020.3043826
Fu, 2009, Deep reactive ion etching as a tool for nanostructure fabrication, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenom., vol. 27, 1520, 10.1116/1.3065991
Wu, 2010, High aspect ratio silicon etch: a review, J. Appl. Phys., vol. 108, 10.1063/1.3474652
Tang, 2018, Ultra deep reactive ion etching of high aspect-ratio and thick silicon using a ramped-parameter process, J. Microelectromech. Syst., vol. 27, 686, 10.1109/JMEMS.2018.2843722
McInerney, 1987, A planarized SiO2 interlayer dielectric with bias-CVD, IEEE Trans. Electron Devices, vol. 34, 615, 10.1109/T-ED.1987.22971
Manfredotti, 1993, Investigation on microvoids in PECVD a-Si:H, MRS Online Proceedings Library, 297
Xie, 2015, Fabrication challenges and test structures for high-aspect-ratio SOI MEMS devices with refilled electrical isolation trenches, Microsyst. Technol., vol. 21, 1719, 10.1007/s00542-014-2357-7
Qian, 2010, Fabrication of ultra-deep high-aspect-ratio isolation trench without void and its application, IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS), Xiamen, China, 654
Zhu, 2005, Fabrication of keyhole-free ultra-deep high-aspect-ratio isolation trench and its applications, J. Micromech. Microeng., vol. 15, 636, 10.1088/0960-1317/15/3/027
Pliskin, 1965, Structural evaluation of silicon oxide films, J. Electrochem. Soc., vol. 112, 1013, 10.1149/1.2423333
K. Nakamura, T. Takahashi, T. Hikichi, I. Takata, An observation of breakdown characteristics on thick silicon oxide, International Symposium on Power Semiconductor Devices and ICs, Pacifico Yokohama, Japan, pp. 374–379, 1995.
Pi, 2016, Design, analysis, and characterization of stress-engineered 3D microstructures comprised of PECVD silicon oxide and nitride, J. Micromech. Microeng., vol. 26, 10.1088/0960-1317/26/6/065010
Batey, 1986, Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition, J. Appl. Phys., vol. 60, 3136, 10.1063/1.337726
X. Zhao, Monolithic Microscale Gas Chromatographs with Integrated Gas Pumps, Ph.D. dissertation, Dept. Elect. Eng., University of Michigan, Ann Arbor, MI, USA, 2023.
Pritchard, 2016
Ishihara, 1999, Inertial sensor technology using DRIE and wafer bonding with connecting capability, J. Microelectromech. Syst., vol. 8, 403, 10.1109/84.809054
Knechtel, 2005, Glass frit bonding: an universal technology for wafer level encapsulation and packaging, Microsyst. Technol., vol. 12, 63, 10.1007/s00542-005-0022-x
DeWitt, 2019, Development of technology for low-power gas sensing: IARPA's MAEGLIN program, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XX, vol. 11010, 110100T
DeWitt, 2020, Advancements in compact gas collection and analysis from IARPA’s MAEGLIN program, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XXI, vol. 11416, 114160L
Lucovsky, 1987, Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitation, J. Vac. Sci. Technol. A: Vac. Surf. Films, vol. 5, 2231, 10.1116/1.574963
Hersee, 1982, Low-pressure chemical vapor deposition, Annu. Rev. Mater. Sci., vol. 12, 65, 10.1146/annurev.ms.12.080182.000433
Petrik, 2000, Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition, J. Appl. Phys., vol. 87, 1734, 10.1063/1.372085
Arnold, 1991, Charging of pattern features during plasma etching, J. Appl. Phys., vol. 70, 5314, 10.1063/1.350241
Hwang, 1997, On the origin of the notching effect during etching in uniform high density plasmas, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct. Process. Meas. Phenom., vol. 15, 70, 10.1116/1.589258
Nozawa, 1995, The electron charging effects of plasma on notch profile defects, Jpn. J. Appl. Phys., vol. 34, 2107, 10.1143/JJAP.34.2107
