Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

Nature Nanotechnology - Tập 3 Số 4 - Trang 210-215 - 2008
Anindya Das1, Simone Pisana2, Banani Chakraborty3, S. Piscanec2, Subhankar Saha3, Umesh V. Waghmare4, Kostya S. Novoselov5, H. R. Krishnamurthy3, A. K. Geǐm5, Andrea C. Ferrari2, Anil K. Sood3
1Department of Physics, Indian Institute of Science, Bangalore 560012,#N#India#N#
2Department of Engineering, Cambridge University, 9 JJ Thomson Avenue, Cambridge, UK
3Department of Physics, Indian Institute of Science, Bangalore, India
4Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India
5Department of Physics and Astronomy, Manchester University, Manchester, UK

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