Molecular Dynamics Simulations of Nanoindentation of Silicon Nitride

Springer Science and Business Media LLC - Tập 539 - 1998
Philip Walsh1, Andrey Omeltchenko1, Hideaki Kikuchi1, Rajiv K. Kalia1, Aiichiro Nakano1, Priya Vashishta1
1Concurrent Computing Laboratory for Materials Simulation, Department of Physics & Astronomy and Department of Computer Science, Louisiana State University, Baton Rouge, LA, 70803-4001

Tóm tắt

AbstractThis is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si3N4). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. We report load-displacement curves for several Si3N4 configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si3N4 for both tip and substrate are also reported.

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Springer Science and Business Media LLC

Tập 539

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