Molecular Beam Epitaxy Study of InAs/GaSb Heteroepitaxy on The (111)A and (111)B Orientations

We have investigated the molecular beam epitaxial growth of homoepitaxial InAs and GaSb and InAs/GaSb heterostructures on both the (111)A and (111)B orientations. Our studies have found that high quality GaSb epilayers can be grown on both the (111)A and (111l)B orientations over a wide range of growth temperatures and flux ratios. Reflection high energy electron diffr-action phase diagrams for GaSb [111[ are presented. InAs/GaSb heterostructures, simultaneously grown on (11l)A and (111)B orientations, have been investigated by secondary ion mass spectroscopy depth profiles and double crystal x-ray diffraction. Unintentional incorporation of the ‘second’ group-V element is found to be approximately three times greater in the (111)A orientation than in the (111)B for both species.