Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Journal of Alloys and Compounds - Tập 614 - Trang 323-329 - 2014
Zagarzusem Khurelbaatar1, Yeon-Ho Kil1, Hyung-Joong Yun1,2, Kyu-Hwan Shim1, Jung Tae Nam3, Keun-Soo Kim3, Sang-Kwon Lee4, Chel-Jong Choi1
1School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Republic of Korea
2Division of Material Science, Korea Basic Science Institute, Daejeon 305-806, Republic of Korea
3Department of Physics & Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea
4Department of Physics, Chung-Ang University, Seoul 156-756, Republic of Korea

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