Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer
Tài liệu tham khảo
Kita, 2004, Growth mechanism difference of sputtered HfO2 on Ge and on Si, Appl. Phys. Lett., 85, 52, 10.1063/1.1767607
Maeda, 2004, Ge metal–insulator–semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates, Appl. Phys. Lett., 85, 3181, 10.1063/1.1805194
Li, 2006, Metal-germanide Schottky source/drain transistor on germanium substrate for future CMOS technology, Thin Solid Films, 504, 28, 10.1016/j.tsf.2005.09.033
Zheng, 2012, Ohmic contact on n-type Ge using Yb-germanide, Appl. Phys. Lett., 101, 223501-1, 10.1063/1.4768700
Chawanda, 2012, Effect of thermal treatment on the characteristics of iridium Schottky barrier diodes on n-Ge (100), J. Alloys Comp., 513, 44, 10.1016/j.jallcom.2011.09.053
Soylu, 2009, Barrier characteristics of gold Schottky contacts on moderately doped n-lnP based on temperature dependent I–V and C–V measurements, Microelectron. Eng., 86, 88, 10.1016/j.mee.2008.09.045
Kumar, 2013, Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer, J. Alloys Comp., 549, 18, 10.1016/j.jallcom.2012.09.085
Dimoulas, 2006, Fermi-level pinning and charge neutrality level in germanium, Appl. Phys. Lett., 89, 252110-1, 10.1063/1.2410241
Nishimura, 2008, A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film, Appl. Phys. Express, 1, 051406-1, 10.1143/APEX.1.051406
Kobayashi, 2009, Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal–oxide–semiconductor field-effect-transistor application, J. Appl. Phys., 105, 023702-1, 10.1063/1.3065990
Lietena, 2011, Mechanisms of Schottky barrier control on n-type germanium using Ge3N4 interlayers, J. Electrochem. Soc., 158, H358, 10.1149/1.3545703
Zhou, 2008, Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide, Appl. Phys. Lett., 93, 202105-1, 10.1063/1.3028343
Jason Lin, 2011, Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height, Appl. Phys. Lett., 98, 092113-1
Ikeda, 2006, Modulation of NiGe/Ge Schottky barrier height by sulfur segregation during Ni germanidation, Appl. Phys. Lett., 88, 152115-1, 10.1063/1.2191829
Wu, 2011, Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions, Appl. Phys. Lett., 99, 253504-1, 10.1063/1.3666779
Li, 2009, Large-area synthesis of high-quality and uniform graphene films on copper foils, Science, 324, 1312, 10.1126/science.1171245
Castro Nero, 2009, The electronic properties of graphene, Rev. Mod. Phys., 81, 109, 10.1103/RevModPhys.81.109
Moon, 2009, Epitaxial-graphene RF field effect transistors on Si-face 6H–SiC substrates, IEEE Electron. Dev. Lett., 30, 650, 10.1109/LED.2009.2020699
Lin, 2010, 100-GHz transistors from wafer-scale epitaxial graphene, Science, 327, 662, 10.1126/science.1184289
Kim, 2013, Enhanced optical response of hybridized VO2/graphene films, Nanoscale, 5, 2632, 10.1039/c3nr34054f
Lee, 2014, Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated Germanium, Science, 344, 286, 10.1126/science.1252268
Ding, 2014, The direct synthesis of graphene on a Gallium Nitride substrate, Chem. Vap. Deposition, 20, 1, 10.1002/cvde.201307085
Wei, 2012, Laser direct growth of graphene on Si substrate, Appl. Phys. Lett., 100, 023110-1, 10.1063/1.3675636
Ferrari, 2006, Raman spectrum of graphene and graphene layers, Phys. Rev. Lett., 97, 187401-1, 10.1103/PhysRevLett.97.187401
Koh, 2011, Reliably counting atomic planes of few-layer graphene (n>4), ACS Nano, 5, 269, 10.1021/nn102658a
Rhoderick, 1988
Tung, 1992, Electron transport at metal–semiconductor interfaces: general theory, Phys. Rev. B, 45, 13509, 10.1103/PhysRevB.45.13509
Jyothi, 2013, Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator, J. Alloys Comp., 556, 252, 10.1016/j.jallcom.2012.12.143
Cheung, 1986, Extraction of Schottky diode parameters from forward current–voltage characteristics, Appl. Phys. Lett., 49, 85, 10.1063/1.97359
Norde, 1979, A modified forward I–V plot for Schottky diodes with high series resistance, J. Appl. Phys., 50, 5052, 10.1063/1.325607
Sharma, 2012, Study of barrier inhomogeneities in I–V–T and C–V–T characteristics of Al/Al2O3/PVA:n-ZnSe metal–oxide–semiconductor diode, J. Appl. Phys., 112, 024521-1, 10.1063/1.4737589
Demircioglu, 2011, Effects of temperature on series resistance determination of electrodeposited Cr/n-Si/Au-Sb Schottky structure, Microelectron. Eng., 88, 2997, 10.1016/j.mee.2011.04.060
Sze, 1981
Ohdomari, 1980, Parallel silicide contacts, J. Appl. Phys., 51, 3735, 10.1063/1.328160
Freeouf, 1982, Effective barrier heights of mixed phase contacts: size effects, Appl. Phys. Lett., 40, 634, 10.1063/1.93171
Janardhanam, 2013, Depinning of the Fermi level at the Ge Schottky interface through Se treatment, Scripta Mater., 69, 809, 10.1016/j.scriptamat.2013.09.004
Rajogopal Reddy, 2013, Electrical properties and interface states of rare-earth metal ytterbium Schottky contacts to p-type lnP, Mater. Trans., 54, 2173, 10.2320/matertrans.M2013281
Güllü, 2008, Fabrication and electrical characteristics of Schottky diode based on organic material, Microelectron. Eng., 85, 1647, 10.1016/j.mee.2008.04.003
Kılıcoglu, 2007, The effect of a novel organic compound chiral macrocyclic tetraamide-I interfacial layer on the calculation of electrical characteristics of an Al/tetraamide-I/p-Si contact, Synth. Met., 157, 540, 10.1016/j.synthmet.2007.06.001
Aydoğan, 2005, The effects of the temperature on the some parameters obtained from current–voltage and capacitance–voltage characteristics of polypyrrole/n-Si structure, Polymer, 46, 563, 10.1016/j.polymer.2004.11.006
Shang, 2006, Effect of carrier trapping on the hysteretic current–voltage characteristics in Ag/La0.7Ca0.3MnO3/Pt heterostructures, Phys. Rev. B, 73, 245427-1, 10.1103/PhysRevB.73.245427
Singh, 2012, Organic Schottky diode based on conducting polymer–nanoclay composite, RSC. Adv., 2, 5277, 10.1039/c2ra20206a
Hill, 1980, A single frequency approximation for interface state density determination, Solid State Electron., 23, 987, 10.1016/0038-1101(80)90064-7
Mamor, 2009, Interface gap states and Schottky barrier inhomogeneity at metal/n-type GaN Schottky contacts, J. Phys. Condens. Matter., 21, 335802-1, 10.1088/0953-8984/21/33/335802
Chand, 1997, Effects of barrier height distribution on the behavior of a Schottky diode, J. Appl. Phys., 82, 5005, 10.1063/1.366370
Kumar, 2012, Electrical properties of Pt/n-Ge Schottky contact modified using copper phthalocyanine (CuPc) interlayer, J. Electrochem. Soc., 159, H33, 10.1149/2.041201jes
