Modeling and simulation of short channel length effect in open drain MOSFET THz detectors

Journal of Engineering and Applied Science - Tập 70 - Trang 1-13 - 2023
Yasmeen A. Mohamed1, Nihal Y. Ibrahim2, Mohamed Y. F. El Zayat1, Salah E. A. Elnahwy2
1Department of Physics, Faculty of Science, Fayoum University, Faiyum, Egypt
2Department of Engineering Physics and Mathematics, Faculty of Engineering, Cairo University, Giza, Egypt

Tóm tắt

THz radiation detection using FET devices has attracted increasing attention lately. In this paper, we further study a simulated model of FET rectification detection in short channel length. To achieve this, both physics-based analytic model and a detailed TCAD simulation were contacted and compared. The analytical model provided detailed dependence of the response on the channel length below the extension length of the radiation. However, the simulation results were validated by comparison with the experimental data to confirm the validity of the theoretical model. These results present a new model of rectification for short channel lengths and its dependence on the extinction of AC signal through the channel.

Tài liệu tham khảo

Kim S, Park D-W, Choi K-Y, Lee S-G (2015) MOSFET characteristics for terahertz detector application from on-wafer measurement. IEEE Trans Terahertz Sci Technol 5(6):1068–1077. https://doi.org/10.1109/TTHZ.2015.2487780 Pala N, Teppe F, Veksler D, Deng Y, Shur MS, Gaska R (2005) Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs. Electron Lett 41(7):447. https://doi.org/10.1049/el:20058182 Tauk R et al (2006) Plasma wave detection of terahertz radiation by silicon field effects transistors: responsivity and noise equivalent power. Appl Phys Lett 89(25):253511. https://doi.org/10.1063/1.2410215 But D (2014) Silicon based terahertz radiation detectors. In: Charles Coulomb Lab. – UMR 5221 CNRS-Univ. Montp. 2, p 104 Shang D, Xing Y, Sun P (2019) Short-channel MOSFET for terahertz wave detection fabricated in 55 nm silicon CMOS process technology. Electron Lett 55(25):1357–1358. https://doi.org/10.1049/el.2019.2879 Delgado Notario JA et al (2017) Experimental and theoretical studies of Sub-THz detection using strained-Si FETs. J Phys Conf Ser 906:012003. https://doi.org/10.1088/1742-6596/906/1/012003 Knap W et al (2010) Field effect transistors for terahertz detection – silicon versus III–V material issue. Opto−Electron Rev 18(3):225–230. https://doi.org/10.2478/s11772-010-018-7 Ludwig F, Bauer M, Lisauskas A, Roskos HG (2019) Circuit-based hydrodynamic modeling of AlGaN/GaN HEMTs. In: ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Cracow, Poland, pp 270–273. https://doi.org/10.1109/ESSDERC.2019.8901683 Bauer M et al (2019) A high-sensitivity AlGaN/GaN HEMT terahertz detector with integrated broadband bow-tie antenna. IEEE Trans Terahertz Sci Technol 9(4):430–444. https://doi.org/10.1109/TTHZ.2019.2917782 Kim S, Hong S, Jang J (2020) Strong and narrowband terahertz radiation from GaAs based pHEMT and terahertz imaging. Microw Opt Technol Lett 62(12):3791–3795. https://doi.org/10.1002/mop.32525 Hassanalieragh M, Newman JD, Fourspring K, Ignjatovic Z (2017) THz detection in sub-threshold Si MOSFETs by non-linear channel electron density modulation. In: 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), Boston, MA, USA, pp 1434–1437. https://doi.org/10.1109/MWSCAS.2017.8053202 Horowitz JD (2017) Characterization of optimized Si-MOSFETs for terahertz detection. RIT Scholar Works, Rochester Institute of Technology Wang J, Du G, Liu X (2015) Monte Carlo investigation of Silicon MOSFET for terahertz detection. In: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, pp 210–213. https://doi.org/10.1109/SISPAD.2015.7292296 Ikamas K, Nevinskas I, Krotkus A, Lisauskas A (2018) Silicon field effect transistor as the nonlinear detector for terahertz autocorellators. Sensors 18(11):3735. https://doi.org/10.3390/s18113735 Ibrahim NY, Rafat NH, Elnahwy SEA (2013) Modeling of field effect transistor channel as a nonlinear transmission line for terahertz detection. J Infrared Millim Terahertz Waves 34(10):606–616. https://doi.org/10.1007/s10762-013-0009-0 Dyakonov M, Shur M (1996) Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid. IEEE Trans Electron Devices 43(3):380–387. https://doi.org/10.1109/16.485650 Lisauskas A, Pfeiffer U, Öjefors E, Bolìvar PH, Glaab D, Roskos HG Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors. J Appl Phys. 105(11). https://aip.scitation.org/doi/10.1063/1.3140611. Accessed 5 Feb 2022 Ayoub AB, Ibrahim NY, Elnahwy SEA (2020) Second-order non-quasi-static, compact model of field-effect transistor revealing terminal rectification beyond their cutoff frequency. IET Circuits Devices Syst 14(5):660–666. https://doi.org/10.1049/iet-cds.2019.0127 Gutin A, Nahar S, Hella M, Shur M (2013) Modeling terahertz plasmonic Si FETs with SPICE. IEEE Trans Terahertz Sci Technol 3(5):545–549. https://doi.org/10.1109/TTHZ.2013.2262799 Gutin A, Ytterdal T, Kachorovskii V, Muraviev A, Shur M (2013) THz SPICE for modeling detectors and nonquadratic response at large input signal. IEEE Sens J 13(1):9 Sakhno M, Golenkov A, Sizov F (2013) Uncooled detector challenges: Millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors. J Appl Phys 114(16):164503. https://doi.org/10.1063/1.4826364 Ibrahim NY, Rafat NH, Elnahwy SEA (2015) Drift transport model of field effect transistors in saturation beyond cutoff. J Phys Appl Phys 48(13):135102. https://doi.org/10.1088/0022-3727/48/13/135102 Elkhatib TA, Kachorovskii VYu, Stillman WJ, Rumyantsev S, Zhang X-C, Shur MS (2011) Terahertz response of field-effect transistors in saturation regime. Appl Phys Lett 98(24):243505. https://doi.org/10.1063/1.3584137 Ibrahim NY, Rafat NH, Elnahwy SEA (2015) Multi-input intrinsic and extrinsic field effect transistor models beyond cutoff frequency. Solid-State Electron 103:236–241. https://doi.org/10.1016/j.sse.2014.07.006 Gutin A, Kachorovskii V, Muraviev A, Shur M (2012) Plasmonic terahertz detector response at high intensities. J Appl Phys 112(1):014508. https://doi.org/10.1063/1.4732138 Ibrahim N, Rafat NH, El-Din Elnahwy S (2016) Simulation study for the use of transistor contacts for sub-terahertz radiation detection. IET Microw Antennas Propag 10(7):784–790. https://doi.org/10.1049/iet-map.2015.0492 Sze SM, Lee MK (2012) Semiconductor devices, physics and technology, 3rd edn. Wiley, Hoboken Ibrahim NYM (2014) Modeling terahertz radiation detection using field effect transistors beyond cutoff. Cairo University, Faculty of Engineering, p 147 Khan MIW, Kim S, Park D-W, Kim H-J, Han S-K, Lee S-G (2018) Nonlinear analysis of nonresonant THz response of MOSFET and implementation of a high-responsivity cross-coupled THz detector. IEEE Trans Terahertz Sci Technol 8(1):108–120. https://doi.org/10.1109/TTHZ.2017.2778499