Mobility-Spectrum Analysis of an Anisotropic Material System with a Single-Valley Indirect-Band-Gap Semiconductor Quantum-Well

Hodoug Joung1, Il-Ho Ahn1, Woochul Yang2, Deuk Young Kim3
1Quantum Functional Semiconductor Research Center, Dongguk University, Seoul, South Korea
2Department of Physics, Dongguk University, Seoul, South Korea
3Department of Semiconductor Science, Dongguk University, Seoul, South Korea

Tóm tắt

Từ khóa


Tài liệu tham khảo

Beck, W.A., Anderson, J.R.: Determination of electrical transport properties using a novel magnetic field-dependent Hall technique. J. Appl. Phys. 62, 541–554 (1987)

Rothman, J., Meilhan, J., Perrais, G., Belle, J.P., Gravrand, O.: Maximum entropy mobility spectrum analysis of HgCdTe heterostructures. J. Electron. Mater. 35, 1174–1184 (2006)

Gui, Y., Li, B., Zheng, G., Chang, Y., Wang, S., He, L., Chu, J.: Evaluation of densities and mobilities for heavy and light holes in p-type HgCdTe molecular beam epitaxy films from magnetic-field-dependent Hall data. J. Appl. Phys. 84, 4327–4331 (1998)

Antoszewski, J., Faraone, L., Vurgaftman, I., Meyer, J.R., Hoffman, C.A.: Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structures. J. Electron. Mater. 33, 673–683 (2004)

Chrastina, D., Hague, J.P., Leadley, D.R.: Application of Bryan’s algorithm to the mobility spectrum analysis of semiconductor devices. J. Appl. Phys. 94, 6583–6590 (2003)

Kiatgamolchai, S., Myronov, M., Mironov, O.A., Kantser, V.G., Parker, E.H.C., Whall, T.E.: Mobility spectrum computational analysis using a maximum entropy approach. Phys. Rev. E 66, 036705 (2002)

Vurgaftman, I., Meyer, J.R., Hoffman, C.A., Cho, S., Ketterson, J.B., Faraone, L., Antoszewski, J., Lindemuth, J.R.: Quantitative mobility spectrum analysis (QMSA) for hall characterization of electrons and holes in anisotropic bands. J. Electron. Mater. 28, 548–552 (1999)

Dasgupta, S., Birner, S., Knaak, C., Bichler, M., Fontcuberta i Morral, A., Abstreiter, G., Grayson, M.: Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass. Appl. Phys. Lett. 93, 132102 (2008)

Sun, Y., Thompson, S.E., Nishida, T.: Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 101, 104503 (2007)

Dhar, S., Ungersböck, E., Kosina, H., Grasser, T., Selberherr, S.: Electron mobility model for <110> stressed silicon including strain-dependent mass. IEEE Trans. Nanotechnol. 6, 97–100 (2007)

Vakili, K., Shkolnikov, Y.P., Tutuc, E., Bishop, N.C., De Poortere, E.P., Shayegan, M.: Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells. Phys. E 34, 89–92 (2006)

Padmanabhan, M., Gokmen, T., Bishop, N.C., Shayegan, M.: Effective mass suppression in dilute, spin-polarized two-dimensional electron systems. Phys. Rev. Lett. 101, 026402 (2008)

Meyer, J.R., Hoffman, C.A., Bartoli, F.J., Arnold, D.A., Sivananthan, S., Fauri, J.P.: Methods for magnetotransport characterization of IR detector materials. Semicond. Sci. Technol. 8, 805–823 (1993)