Microstructure, stress and optical properties of CdTe thin films laser-annealed by using an 808-nm diode laser: Effect of the laser scanning velocity
Tóm tắt
A continuous wave 808-nm diode laser was used for the laser annealing process of CdTe thin films at various laser scanning velocities by using a galvanometric mirror. The grains in the laserannealed CdTe thin films grew along the C (111), H (110) and C (311) planes. The lattice constants of the CdTe thin films reached a minimum at a laser annealing velocity of 167 mm/s due to the disintegration of some large grain. The optical band gap energy of the CdTe thin films was inversely proportional to the lattice constant, showing 1.439 eV and 1.474 eV for the CdTe thin films laserannealed with laser scanning velocities of 667 mm/s and 167 mm/s, respectively. The absorbance of the CdTe thin films showed an improved value of 2.80 in the visible spectral region after laser annealing at a laser scanning velocity of 167 mm/s with the appropriate mixture of scattering and transparent grains in CdTe thin films although the crystallinity had deteriorated and showed the small recrystallized grains under this condition.
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