Microstructural studies of e-beam evaporated alumina thin films

Surface Engineering - Tập 30 Số 8 - Trang 594-599 - 2014
I. Neelakanta Reddy1, ‬V. Raghavendra Reddy2, Arjun Dey1, N. Sridhara1, S. Basavaraja3, Parthasarathi Bera4, C. K. Aanandan4, Anand Sharma1
1Thermal Systems Group, ISRO Satellite Centre, Vimanapura Post, Bangalore-560 017, India
2Department of Physics, Sri Venkateswara University, Tirupati 517502, India.
3Bruker India Nanotechnology Laboratory, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064, India
4Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560 017, India

Tóm tắt

Alumina thin films of different thicknesses, e.g. 90, 120 and 150 nm, were grown on SS304 thin foil by electron beam evaporation technique. The films were post-heat treated at 500, 700 and 800°C in air and subsequently characterised by X-ray diffraction, atomic force microscopy, field emission scanning electron microscopy and X-ray photoelectron spectroscopy. The effects of thicknesses and post-heat treatment on microstructure have been studied. The deposited alumina film was almost stoichiometric. The alumina film of the lowest thickness, i.e. 90 nm post-heat treated at 700°C, showed preferential growth of nanorods and irregular polygonal nanostructures with random orientation.

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Surface Engineering

Tập 30 Số 8

594-599

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