Metal halide perovskites for resistive switching memory devices and artificial synapses

Journal of Materials Chemistry C - Tập 7 Số 25 - Trang 7476-7493
Bixin Li1,2,3,4, Wei Hui1,5,6,4,7, Xueqin Ran1,5,6,4,7, Yingdong Xia1,3,4, Fei Xia1,5,6,4,7, Lingfeng Chao1,5,6,4,7, Yonghua Chen1,3,4, Wei Huang1,8,3,4
1China
2Department of Science Education, Laboratory of College Physics, Hunan First Normal University, Changsha 410205, China
3Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, Jiangsu, China
4Nanjing 211816
5Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
6Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM)
7Nanjing Tech University (NanjingTech)
8Key Laboratory for Organic Electronics & Information Displays (KLOEID), and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, Jiangsu, China

Tóm tắt

This article highlights recent developments of emerging metal halide perovskite based resistive switching memory devices and artificial synapses.

Từ khóa


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Thông tin xuất bản

Journal of Materials Chemistry C

Tập 7 Số 25

7476-7493

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