Metal/TiO2 interfaces for memristive switches

L.O. Chua, IEEE Trans. Circuit Theory CT-18, 507 (1971)

L.O. Chua, S.M. Kang, Proc. IEEE 64, 209 (1976)

D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, Nature 453, 80 (2008)

R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009)

A. Sawa, Mater. Today 11, 28 (2008)

J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008)

D.H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.S. Li, G.S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat. Nanotechnol. 5, 148 (2010)

Y.C. Yang, F. Pan, Q. Liu, M. Liu, F. Zeng, Nano Lett. 9, 1636 (2009)

S.H. Jo, W. Lu, Nano Lett. 8, 392 (2008)

M.J. Lee, S. Seo, D.C. Kim, S.E. Ahn, D.H. Seo, I.K. Yoo, I.G. Baek, D.S. Kim, I.S. Byun, S.H. Kim, I.R. Hwang, J.S. Kim, S.H. Jeon, B.H. Park, Adv. Mater. 19, 73 (2007)

S.H. Jo, K.H. Kim, W. Lu, Nano Lett. 9, 870 (2009)

Q. Liu, W.H. Guan, S.B. Long, R. Jia, M. Liu, J.N. Chen, Appl. Phys. Lett. 92, 3 (2008)

B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 98, 033715 (2005)

B. Gao, B. Sun, H.W. Zhang, L.F. Liu, X.Y. Liu, R.Q. Han, J.F. Kang, B. Yu, IEEE Electron Device Lett. 30, 1326 (2009)

J. Borghetti, G.S. Snider, P.J. Kuekes, J.J. Yang, D.R. Stewart, R.S. Williams, Nature 464, 873 (2010)

T. Hasegawa, T. Ohno, K. Terabe, T. Tsuruoka, T. Nakayama, J.K. Gimzewski, M. Aono, Adv. Mater. 22, 1831 (2010)

H. Choi, H. Jung, J. Lee, J. Yoon, J. Park, D.J. Seong, W. Lee, M. Hasan, G.Y. Jung, H. Hwang, Nanotechnology 20, 5 (2009)

Q.F. Xia, W. Robinett, M.W. Cumbie, N. Banerjee, T.J. Cardinali, J.J. Yang, W. Wu, X.M. Li, W.M. Tong, D.B. Strukov, G.S. Snider, G. Medeiros-Ribeiro, R.S. Williams, Nano Lett. 9, 3640 (2009)

J. Borghetti, Z.Y. Li, J. Straznicky, X.M. Li, D.A.A. Ohlberg, W. Wu, D.R. Stewart, R.S. Williams, Proc. Natl. Acad. Sci. USA 106, 1699 (2009)

H.Y. Jeong, J.Y. Lee, S.Y. Choi, Adv. Funct. Mater. 20, 3912 (2010)

J.J. Yang, F. Miao, M.D. Pickett, D.A.A. Ohlberg, D.R. Stewart, C.N. Lau, R.S. Williams, Nanotechnology 20, 215201 (2009)

J.P. Strachan, M.D. Pickett, J.J. Yang, S. Aloni, A.L.D. Kilcoyne, G. Medeiros-Ribeiro, R.S. Williams, Adv. Mater. 22, 3573 (2010)

J.J. Yang, J. Borghetti, D. Murphy, D.R. Stewart, R.S. Williams, Adv. Mater. 21, 3754 (2009)

E. Linn, R. Rosezin, C. Kugeler, R. Waser, Nat. Mater. 9, 403 (2010)

M. Mrovec, J.M. Albina, B. Meyer, C. Elsässer, Phys. Rev. B 79, 245121 (2009)

J.J. Yang, J.P. Strachan, Q. Xia, D.A.A. Ohlberg, P.J. Kuekes, R.D. Kelley, W.F. Stickle, D.R. Stewart, G. Medeiros-Ribeiro, R.S. Williams, Adv. Mater. 22, 4034 (2010)

B.M. Herbert, J. Appl. Phys. 48, 4729 (1977)

R.T. Tung, Mater. Sci. Eng., R Rep. 35, 1 (2001)

C. Park, Y. Seo, J. Jung, D.W. Kim, J. Appl. Phys. 103, 054106 (2008)

S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, 3rd edn. (Wiley, New York, 2007)

J.P. Strachan, J.J. Yang, R. Munstermann, A. Scholl, G. Medeiros-Ribeiro, D.R. Stewart, R.S. Williams, Nanotechnology 20, 485701 (2009)

R. Münstermann, J.J. Yang, J.P. Strachan, G. Medeiros-Ribeiro, R. Dittmann, R. Waser, Phys. Status Solidi RRL 4, 16 (2009)

Y.A. Chang, W.A. Oates, Materials Thermodynamics (Wiley, New York, 2010)

P. Waldner, G. Eriksson, Calphad 23 189 (1999)

J.J. Yang, N.P. Kobayashi, J.P. Strachan, D.A.A. Ohlberg, M.D. Pickett, Z. Li, G. Medeiros-Ribeiro, R.S. Williams, Chem. Mater 23, 123 (2011)