Mechanisms of charging of insulators under irradiation with medium-energy electron beams

Pleiades Publishing Ltd - Tập 50 Số 4 - Trang 621-630 - 2008
Э. И. Рау1, E. N. Evstaf’eva2, M. V. Andrianov1
1Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, ul. Institutskaya 6, Chernogolovka, Moscow oblast, 142432, Russia
2Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russia

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S. G. Boev and V. Ya. Ushakov, Radiation Accumulation of the Charge in Solid Dielectrics and the Methods Used for Its Diagnostics (Énergoatomizdat, Moscow, 1991) [in Russian].

I. M. Bronshteĭn and B. S. Fraĭman, Secondary Electron Emission (Nauka, Moscow, 1969) [in Russian].

A. R. Shul’man and S. A. Fridrikhov, Secondary Emission Methods for Investigation of Solids (Nauka, Moscow, 1977) [in Russian].

L. Reimer, U. Golla, R. Bongeler, M. Kassens, B. Schindler, and R. Senkel, Optik (Jena, Ger.) 92, 14 (1992).

D. Joy and C. Joy, Micron 27, 247 (1996).

V. V. Aristov, L. S. Kokhanchik, K. P. Meyer, and H. Blumtritt, Phys. Status Solidi A 78, 229 (1983).

J. Cazaux, J. Appl. Phys. 85, 1137 (1999).

J. Cazaux, Nucl. Instrum. Methods Phys. Res., Sect. B 244, 307 (2006).

F. Mady, R. Renoud, and J.-P. Ganachaud, J. Phys.: Condens. Matter 14, 231 (2002).

X. Meyza, D. Goeuriot, D. Treheux, and H.-J. Fitting, J. Appl. Phys. 94, 5384 (2003).

M. Touzin, D. Goeuriot, C. Guerret-Piecourt, D. Treheux, and H. J. Fitting, J. Appl. Phys. 99, 114110.1 (2006).

H. Seiler, J. Appl. Phys. 54, R1 (1983).

L. Reimer, Image Formation in Low-Voltage Scanning Electron Microscopy (SPIE, Washington, 1993).

Nunes de Olivier and B. Gross, J. Appl. Phys. 46, 3132 (1975).

Z. G. Song, C. K. Ong, and H. Gong, J. Appl. Phys. 79, 7123 (1996).

A. Melchinger and S. Hofmann, J. Appl. Phys. 78, 6224 (1995).

M. V. Andrianov, V. V. Aristov, A. V. Gostev, and É. I. Rau, Poverkhnost, No. 3, 40 (2004).

M. V. Andrianov, A. V. Gostev, É. I. Rau, Zh. Kazo, O. Zhbara, and M. Belkhanii, Poverkhnost, No. 12, 9 (2000).