Mechanism of the Slow-Down of the Silicon Etch Rate by a Fluorocarbon Overlayer in CF4/H2 Reactive Ion Etching of Silicon

Springer Science and Business Media LLC - Tập 98 - 1987
Gottlieb S. Oehrlein1, S. W. Robey1, M. A. Jaso1
1IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598, USA#TAB#

Tóm tắt

ABSTRACTWe have utilized an ultrahigh vacuum surface analysis system interfaced via a load-lock to a flexible diode dry etching apparatus to study vacuum transferred CF4/H2 reactive ion etched silicon surfaces by X-ray photoemission spectroscopy (XPS). From the observation and analysis of silicon-fluorine bonding underneath the fluorocarbon film and the dependence of the abundance of fluorosilyl species on the thickness of the fluorocarbon overlayer, the role of the fluorocarbon film in the slow-down of the Si etch rate has been elucidated: The role of the fluorocarbon film is to “protect” the Si surface from attack of fluorine, rather than prevent the escape of SiF4 etch product.

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Tài liệu tham khảo

10.1016/0040-6090(86)90180-X

10.1149/1.2129291

10.1016/0038-1101(75)90184-7

10.1063/1.326660

4. Oehrlein G. S. and Williams H. L. , J. Appl. Phys. (to be published July 1987); For a description of the structure of CF4/H2 reactive ion etched Si surfaces, see G. S. Oehrlein and Y. H. Lee, J. Vac. Sci.&Tech. (to be published 1987).

10.1063/1.336928

10.1103/PhysRevB.30.764

10.1103/PhysRevB.24.2069

10.1016/0169-4332(86)90085-1

10.1063/1.337026

10.1016/0368-2048(78)80005-X

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Springer Science and Business Media LLC

Tập 98

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