Mechanism for an enhanced resistive switching effect of bilayer NiO /TiO2 for resistive random access memory

Journal of Alloys and Compounds - Tập 722 - Trang 753-759 - 2017
Guangdong Zhou1,2,3, Lihua Xiao2, Shuangju Zhang2, Bo Wu4, Xiao‐Qin Liu2, Ankun Zhou5
1Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, China
2Guizhou Institute of Technology, Guizhou 550003, China
3Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, China
4Institute of Theoretical Physics, Zunyi Normal College, Zunyi 563002, China
5China Kunming Institute of Botany, Chinese Academy Science, Kunming 650201, China

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