Mathematical modelling of SPV array by considering the parasitic effects

Springer Science and Business Media LLC - Tập 2 - Trang 1-10 - 2019
Rahul Wilson Kotla1, Srinivasa Rao Yarlagadda1
1Department of Electrical and Electronics Engineering, Vignan’s Foundation for Science Technology and Research, Vadlamudi, Guntur, India

Tóm tắt

In the field of Solar systems, it is necessary for every engineer to start with the solar photovoltaic module (SPVM) design, this paper provides a complete mathematical design specification of the SPVM. The design and development of the SPVM are done to extract its electrical characteristics that are subjective to solar irradiance (G) and temperature (T). This paper model the SPVM with the datasheet of IB Solar-36 series and these modules are connected in parallel to form the Solar Photovoltaic Array (SPVA) is considered for the result verifications. To match the simulation performance of the system accurately with the practical model, this paper uses a novel approach for formulating the equations to find the exact values of shunt resistance (Rsh) and series resistance (Rs) called parasitic effects. The inverse slope method is used to formulate the Parasitic effects from the datasheets, which will extract the exact performance curves of the SPVA. These design principles can be applied to simulate the behavior of any large scale SPVA’s which are present in the system. The simulation and experimental verification using IB Solar-36 polycrystalline modules with varying T and G values for the SPVA are presented.

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