Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

T Omiya1, F Matsukura1, T Dietl1, Y Ohno1, T Sakon2, M Motokawa2, H Ohno1
1Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
2Institute for Materials Research, Tohoku University, Sendai 980-5877, Japan

Tài liệu tham khảo

Ohno, 1996, Appl. Phys. Lett., 69, 363, 10.1063/1.118061 Oiwa, 1997, Solid State Commun., 103, 209, 10.1016/S0038-1098(97)00178-6 Matsukura, 1998, Phys. Rev. B, 57, R2037, 10.1103/PhysRevB.57.R2037 Katsumoto, 1998, Phys. Stat. Sol. B, 205, 115, 10.1002/(SICI)1521-3951(199801)205:1<115::AID-PSSB115>3.0.CO;2-F Shen, 1997, J. Crystal Growth, 175/176, 1069, 10.1016/S0022-0248(96)00967-0 Dietl, 1994, Vol. 3b, 1282 Ando, 1998, J. Appl. Phys., 83, 6548, 10.1063/1.367780 Szczytko, 1996, Solid State Commun., 99, 927, 10.1016/0038-1098(96)00315-8 Ohno, 1998, Appl. Phys. Lett., 73, 363, 10.1063/1.121835 Okabayashi, 1998, Phys. Rev. B, 58, R4211, 10.1103/PhysRevB.58.R4211 Shirai, 1998, J. Magn. Magn. Mater., 177–181, 1383, 10.1016/S0304-8853(97)00350-8 Szczytko, 1999, Phys. Rev. B, 59, 12935, 10.1103/PhysRevB.59.12935 B.L. Al'tshuler, A.G. Aronov, Zh. Eksp. Teor. Fiz. 38 (1983) 128 [JETP Lett. 38 (1983) 153].