Kolawa, 1991, Appl. Surf. Sci., 53, 373, 10.1016/0169-4332(91)90288-U
Back to the Future: Copper Comes of Age, IBM Research 35(4) (1997), http://www.research.ibm.com/resources/magazine/1997/issue_4/copper497.html.
Baumann, 1997, Microelectron. Eng., 33, 283, 10.1016/S0167-9317(96)00056-1
Wittmer, 1980, Appl. Phys. Lett., 36, 456, 10.1063/1.91505
B.L. Sharma, in: CRC Handbook of Chemistry and Physics 1999–2000, 80th Ed., D.R.Lide (Ed.), CRC Press, Cleveland, OH, 1999, p. 12–108.
Shen, 2000, Thin Solid Films, 372, 257, 10.1016/S0040-6090(00)01041-5
Nicolet, 1978, Thin Solid Films, 52, 415, 10.1016/0040-6090(78)90184-0
Nicolet, 1981, J. Vac. Sci. Technol., 19, 786, 10.1116/1.571149
Ekstrom, 2001, Appl. Surf. Sci., 171, 275, 10.1016/S0169-4332(00)00816-3
Shamir, 1989, Surf. Sci., 214, 74, 10.1016/0039-6028(89)90409-3
S. Wolf, R. N. Tauber. Silicon Processing for the VLSI Era, Lattice Press, Sunset Beach, CA, 1986. p. 122.
Ganguli, 2000, J. Vac. Sci. Technol. B, 18, 237, 10.1116/1.591178
Li, 2000, J. Vac. Sci. Technol. B, 18, 242, 10.1116/1.591179
Winter, 2000, Aldrichimica Acta, 33, 3
C. Galewski, T. Seidel, Eur. Semicon. 21(1) (1999) 31–32.
Marcus, 1993, Thin Solid Films, 236, 330, 10.1016/0040-6090(93)90691-H
Faltermeier, 1998, J. Electrochem. Soc., 145, 676, 10.1149/1.1838322
P. Singer, in: Progress in Copper: A Look Ahead, Vol. 25, Semiconductor International, 2002 pp. 46–53.
Tsai, 1995, Thin Solid Films, 270, 531, 10.1016/0040-6090(95)06752-3
Pokela, 1991, Appl. Surf. Sci., 53, 364, 10.1016/0169-4332(91)90287-T
A.R. Ivanova, C.J. Galewski, C.A. Sans, T.E. Seidel, S. Grunow, K. Kumar, A.E. Kaloyeros. Materials Research Society Symposium Proceedings; Advanced Interconnects and Contacts, 1999, pp. 321–326.
Shaw, 2001, J. Electron. Mater., 30, 1602, 10.1007/s11664-001-0179-8
International Technology Roadmap for Semiconductors: Interconnect. International SEMATECH, Austin, TX, 2001, pp. 1–25.
S. Takahashi, K. Tai, H. Ohtorii, N. Komai, Y. Segawa, H. Horikoshi, Z. Yasuda, H. Yamada, M. Ishihara, T. Nogami, 2002 Symposium on VLSI Technology: Digest of Technical Papers, Honolulu, HI.
Nagai, 1993, Appl. Surf. Sci., 70-1, 759, 10.1016/0169-4332(93)90617-K
Lee, 1994, J. Vac. Sci. Technol. B, 12, 69, 10.1116/1.587110
Lee, 1993, Appl. Phys. Lett., 62, 3312, 10.1063/1.109622
Nakajima, 1987, J. Electrochem. Soc., 134, 3175, 10.1149/1.2100365
M. Nagai, K. Kishida, S. Omi, Nippon Kagaku Kaishi (1996 No.4) 368–374.
M. Nagai, K. Kishida, S. Omi, Nippon Kagaku Kaishi (1994 No.10) 907–912.
K. Iguchi, M. Urai, C. Shiga, M. Koba, JP Patent 01005015, 1989.
Kim, 1991, Appl. Phys. Lett., 59, 929, 10.1063/1.106304
Currie, 1992, J. Mater. Sci., 27, 2739, 10.1007/BF00540699
Chiu, 1993, J. Mater. Res., 8, 1353, 10.1557/JMR.1993.1353
Tsai, 1996, Appl. Phys. Lett., 68, 1412, 10.1063/1.116097
Kelsey, 1999, J. Vac. Sci. Technol. B, 17, 1101, 10.1116/1.590703
R.G. Gordon, S. Barry, R.N.R. Broomhall-Dillard, V.A. Wagner, Y. Wang, Mater. Res. Soc. Symp. Proc. 612 (2000) D9.12/1–D9.12/6.
S.W. Johnston, C.G. Ortiz, O.J. Bchir, Y. Zhang, L. McElwee-White, T.J. Anderson, in: M.D. Allendorf, T.M. Besmann. Chemical Vapor Deposition: CVD XV (15th), Vol. 13, Electrochemical Society, Pennington, NJ, 2000, pp. 268–276.
Interrante, 1989, Inorg. Chem., 28, 252, 10.1021/ic00301a019
Lewkebandara, 1994, Inorg. Chem., 33, 5879, 10.1021/ic00103a041
C.J. Galewski, P.N. Gadgil, L.D. Matthysse, C.A. Sans, V.S. Dharmadhikari, Mater. Res. Soc. Symp. Proc. ULSI XII (1997) 277–282.
Kattelus, 1985, J. Vac. Sci. Technol. A, 3, 2246, 10.1116/1.572901
Park, 1996, J. Appl. Phys., 80, 5674, 10.1063/1.363620
Wang, 2001, J. Electrochem. Soc., 148, C563, 10.1149/1.1385378
Eizenberg, 1994, Appl. Phys. Lett., 65, 2416, 10.1063/1.112693
Kim, 1999, J. Electrochem. Soc., 146, 1455, 10.1149/1.1391785
Ingrey, 1982, J. Vac. Sci. Technol., 20, 968, 10.1116/1.571655
S. Jonsson, Phase Relations in Quaternary Hard Materials, Ph.D. Dissertation, Royal Institute of Technology, Stockholm, Sweden, 1993.
Raaijmakers, 1993, Appl. Surf. Sci., 73, 31, 10.1016/0169-4332(93)90143-Y
