Low threshold voltage, highly stable electroforming-free threshold switching characteristics in VOx films-based device

Linn, 2010, Complementary resistive switches for passive nanocrossbar memories, Nat. Mater., 9, 403, 10.1038/nmat2748 Li, 2013, Bipolar one diode-one resistor integration for high-density resistive memory applications, Nanoscale, 5, 4785, 10.1039/c3nr33370a Huang, 2011, Bipolar nonlinear selector for 1s1r crossbar array applications, IEEE Electron. Device Lett., 32, 1427, 10.1109/LED.2011.2161601 Kim, 2013, 32 × 32 crossbar array resistive memory composed of a stacked Schottky diode and unipolar resistive memory, Adv. Funct. Mater., 23, 1440, 10.1002/adfm.201202170 Rosezin, 2011, Integrated complementary resistive switches for passive high-density nanocrossbar arrays, IEEE Electron. Device Lett., 32, 191, 10.1109/LED.2010.2090127 Cario, 2010, Electric-field-induced resistive switching in a family of mott insulators: towards a new class of rram memories, Adv. Mater., 22, 5193, 10.1002/adma.201002521 Kim, 2014, Crossbar rram arrays: selector device requirements during write operation, IEEE Trans. Electron. Dev., 61, 2820, 10.1109/TED.2014.2327514 Midya, 2017, Anatomy of Ag/hafnia‐based selectors with 1010 nonlinearity, Adv. Mater., 29, 10.1002/adma.201604457 Song, 2017, Self-limited cbram with threshold selector for 1s1r crossbar array applications, IEEE Electron. Device Lett., 38, 1532, 10.1109/LED.2017.2757493 Lee, 2007, A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories, Adv. Mater., 19, 73, 10.1002/adma.200601025 Choi, 2016, Trilayer tunnel selectors for memristor memory cells, Adv. Mater., 28, 356, 10.1002/adma.201503604 Kawahara, 2013, An 8 mb multi-layered cross-point reram macro with 443 mb/s write throughput, IEEE J. Solid State Circ., 48, 178, 10.1109/JSSC.2012.2215121 Chen, 2017, Abnormal multiple charge memorystates in exfoliated few-layer WSe2 transistors, ACS Nano, 11, 1091, 10.1021/acsnano.6b08156 Sun, 2018, Physically transient threshold switching device based on magnesium oxide for security application, Small, 14 Lee, 2013, A plasma-treated chalcogenide switch device for stackable scalable 3d nanoscale memory, Nat. Commun., 4, 10.1038/ncomms3629 Panda, 2012, Resistive switching characteristics of nickel silicide layer embedded HfO2 film, Appl. Phys. Lett., 100, 112901, 10.1063/1.3694045 Gibson, 2016, An accurate locally active memristor model for s-type negative differential resistance in NbOx, Appl. Phys. Lett., 108, 10.1063/1.4939913 Lee, 2007, Two series oxide resistors applicable to high speed and high density nonvolatile memory, Adv. Mater., 19, 3919, 10.1002/adma.200700251 Sun, 2015, High on–off ratio improvement of ZnO-based forming-free memristor by surface hydrogen annealing, ACS Appl. Mater. Interfaces, 7, 7382, 10.1021/acsami.5b01080 Karunakaran, 2005, Vanadia-catalyzed solar photooxidation of aniline, J. Colloid Interface Sci., 289, 466, 10.1016/j.jcis.2005.03.071 Liu, 2005, Vanadium pentoxide nanobelts: highly selective and stable ethanol sensor materials, Adv. Mater., 17, 764, 10.1002/adma.200400993 Nagaraju, 2014, Two-dimensional heterostructures of V2O5 and reduced graphene oxide as electrodes for high energy density asymmetric supercapacitors, J. Mater. Chem., 2, 17146, 10.1039/C4TA03731F Imawan, 2001, Structural and gas-sensing properties of V2O5-MoO3 thin films for H2 detection, Sensor. Actuator. B Chem., 77, 346, 10.1016/S0925-4005(01)00732-8 Krusin-Elbaum, 2004, Room-temperature ferromagnetic nanotubes controlled by electron or hole doping, Nature, 431, 672, 10.1038/nature02970 Xue, 2017, A 1d vanadium dioxide nanochannel constructed via electric‐field‐induced ion transport and its superior metal-insulator transition, Adv. Mater., 29, 1702162, 10.1002/adma.201702162 Wan, 2017, A forming-free bipolar resistive switching behavior based on ITO/V2O5/ITO structure, Appl. Phys. Lett., 111, 10.1063/1.4995411 Chen, 2017, Influence of thermal annealing treatment on bipolar switching properties of vanadium oxide thin-film resistance random-access memory devices, J. Electron. Mater., 46, 2147, 10.1007/s11664-016-5148-3 Macaluso, 2014, Resistive switching behaviour in ZnO and VO2 memristors grown by pulsed laser deposition, Electron. Lett., 50, 262, 10.1049/el.2013.3175 Pellegrino, 2012, Multistate memory devices based on free‐standing VO2/TiO2 microstructures driven by joule self‐heating, Adv. Mater., 24, 2929, 10.1002/adma.201104669 Singh, 2014, Atomic layer deposition of transparent VOx thin films for resistive switching applications, Chem. Vap. Depos., 20, 291, 10.1002/cvde.201407122 Bae, 2013, The memristive properties of a single VO2 nanowire with switching controlled by self‐heating, Adv. Mater., 25, 5098, 10.1002/adma.201302511 Rupp, 2018, Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films, J. Appl. Phys., 123, 10.1063/1.5006145 Zhang, 2016, VO2-based selection device for passive resistive random access memory application, IEEE Electron. Device Lett., 37, 978 Qazilbash, 2007, Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging, Science, 318, 1750, 10.1126/science.1150124 Madan, 2015, Quantitative mapping of phase coexistence in mott-peierls insulator during electronic and thermally driven phase transition, ACS Nano, 9, 2009, 10.1021/nn507048d Zhou, 2019, A high performance electroformed single-crystallite VO2 threshold switch, Nanoscale, 11, 22070, 10.1039/C9NR08364B Rupp, 2016, Threshold switching in amorphous Cr-doped vanadium oxide for new crossbar selector, 1 Hota, 2015, Electroforming free resistive switching memory in two-dimensional VOx nanosheets, Appl. Phys. Lett., 107, 163106, 10.1063/1.4933335 Kim, 2021, Extremely low leakage threshold switch with enhanced characteristics via Ag doping on polycrystalline ZnO fabricated by facile electrochemical deposition for an x-point selector, ACS Appl. Electron. Mater., 3, 2309, 10.1021/acsaelm.1c00197 Lee, 2021, Improved threshold switching and endurance characteristics using controlled stomic‐scale switching in a 0.5 nm thick stoichiometric HfO2 layer, Adv. Electron. Mater., 7, 2000869, 10.1002/aelm.202000869 Chen, 2021, Forming-free ultra-high on-state current and self-compliance selector based on titanium-doped NbOx thin films, Ceram. Int. Zhou, 2021, Phase‐transition‐induced VO2 thin film IR photodetector and threshold switching selector for optical neural network applications, Adv. Electron. Mater., 7, 2001254, 10.1002/aelm.202001254 Bousoulas, 2021, Emulating artificial neuron and synaptic properties with SiO2-based memristive devices by tuning threshold and bipolar switching effects, J. Phys. D Appl. Phys., 54, 225303, 10.1088/1361-6463/abea3b Lv, 2017, Atomic layer deposition of VO2 films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor, Appl. Surf. Sci., 396, 214, 10.1016/j.apsusc.2016.10.044 Nirantar, 2019, In situ nanostructural analysis of volatile threshold switching and non‐volatile bipolar resistive switching in mixed‐phased a‐VOx asymmetric crossbars, Adv. Electron. Mater., 5, 1900605, 10.1002/aelm.201900605 Silversmit, 2004, Determination of the V2p xps binding energies for different vanadium oxidation states (V5+ to V0+), J. Electron. Spectrosc. Relat. Phenom., 135, 167, 10.1016/j.elspec.2004.03.004 Jaim, 2017, Stability of the oxygen vacancy induced conductivity in BaSnO3 thin films on SrTiO3, Appl. Phys. Lett., 111, 172102, 10.1063/1.4996548 Son, 2011, Excellent selector characteristics of nanoscale VO2 for high-density bipolar reram applications, IEEE Electron. Device Lett., 32, 1579, 10.1109/LED.2011.2163697 Lee, 2018, Chemical vapor-deposited vanadium pentoxide nanosheets with highly stable and low switching voltages for effective selector devices, ACS Appl. Mater. Interfaces, 10, 42875, 10.1021/acsami.8b15686 Chen, 2019, Light assisted multilevel resistive switching memory devices based on all-inorganic perovskite quantum dots, Appl. Phys. Lett., 114, 181103, 10.1063/1.5087594 Hsu, 2018, Forming-free sol-gel ZrOx resistive switching memory, J. Alloys Compd., 769, 65, 10.1016/j.jallcom.2018.07.341