Low-temperature ultraviolet sol-gel photoannealing processing of multifunctional lead-titanate-based thin films

M. L. Calzada1, Íñigo Bretos1, Ricardo Jiménez1, Hervé Guillon2, J. Ricote1, L. Pardo1
1Instituto Ciencia de Materiales de Madrid (CSIC), Cantoblanco, Madrid, Spain
2Advanced Vaporizers, Rue de la vieille poste, PIT de la Pompignane, KEMSTREAM, Montpellier, Cedex 1, France

Tóm tắt

(Pb1−xCax)TiO3 perovskite thin films with nominal compositions of (Pb0.76Ca.24)TiO3 (ferroelectric) and (Pb0.50Ca0.50)TiO3 (relaxor-ferroelectric) were prepared on silicon substrates at low temperatures compatible with those used in Si-technology. The technique used for the processing of these films was ultraviolet (UV) sol-gel photoannealing, using photo-sensitive precursor solutions and UV-assisted rapid thermal processing. The UV-irradiation and thermal treatment of the solution-derived films (gel films) were carried out in air or in oxygen. In both cases, the formation of the perovskite occurred at the same temperature, and this temperature increased as the Ca2+ content increased. Thus, full-perovskite films of (Pb0.76Ca.24)TiO3 were obtained at 723 K whereas those of (Pb0.50Ca0.50)TiO3 were formed at 773 K. Well-defined ferroelectric hysteresis loops were measured in the (Pb0.76Ca.24)TiO3 films, with values of remanent polarization of Pr ∼ 11 μC cm−2 and coercive fields for the films processed in oxygen lower than those of the films processed in air, Ec ∼ 164 and ∼226 kV.cm−1, respectively. These films showed a ferro-paraelectric transition at close temperatures of Tmax ∼ 605 K, although with higher values of the permittivity for the film processed in oxygen, k ∼ 567 at 10 kHz. The (Pb0.50Ca.50)TiO3 films had a diffuse ferro-paraelectric transition with a relaxor-like character, also with higher k values for the films prepared in oxygen, k ∼ 179 at Tmax ∼ 20 K. The possible use of these materials in silicon integrated multifunctional devices is discussed in this paper.

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Tài liệu tham khảo

10.1016/S0038-1101(00)00259-8

10.1016/j.tsf.2004.02.102

10.1021/cm020757k

Yu, 2004, Formation of high-quality advanced high-k oxide layers at low temperature by excimer UV lamp-assisted photo-CVD and sol-gel processing., Chem. Res. Chinese U., 20, 396

15 Imai H. : Handbook of Sol-Gel Science and Technology: Processing, Characterisation and Applications, edited by S. Sakka Kluwer Academic, Norwell, MA 2004 Vol. 1, Chap. 2, 639

10.1063/1.882324

10.1021/cm030592v

10.1080/00150190211495

10.1016/0169-4332(94)00398-X

10.1039/B300036M

10.1063/1.369362

10.1088/0960-1317/16/7/027

10.1111/j.1151-2916.1992.tb04392.x

10.1016/S0040-6090(98)00953-5

10.1016/j.jeurceramsoc.2005.03.203

10.1007/s10832-004-5092-0

10.1063/1.1984072

2 Semiconductor Industry Association: International Technology Roadmap for Semiconductors ITRS Edition 2005 available at http:/public.itrs.net/Common/2005ITRS/Home2005.htm

Leong, 2004, Silicon device scaling to the sub-10-nm regime., Science, 306, 2057, 10.1126/science.1100731

10.1143/JJAP.42.5981

10.1016/j.jeurceramsoc.2005.03.051

Mendiola, 2002, Handbook of Thin Film Materials, Vol. 3, Chap. 6, 369

10.1016/j.jeurceramsoc.2005.03.039

19 Soyama N. , Sasaki G. , Atsuki T. , Yonezawa T. Ogi K. : Proceedings of the Ninth International Symposium on Applications of Ferroelectrics, ISAF’94 edited by R.K. Pandey, M. Liu, and A. Safari The Pennsylvania State University, NJ IEEE Catalog Number 94CH3416-5 1994 408

10.1016/0022-3093(94)90241-0

10.1002/adma.200306401

10.1038/21526

10.1016/0022-1902(61)80297-2

10.1063/1.1952567

10.1021/cm990140b

10.1016/S0025-5408(97)00189-X