Low power multilevel resistive switching in titanium oxide-based RRAM devices by interface engineering

Wang, 2020, Resistive switching materials for information processing, Nat. Rev. Mater., 5, 173, 10.1038/s41578-019-0159-3 Markovic, 2020, Physics for neuromorphic computing, Nat. Rev. Phys., 2, 499, 10.1038/s42254-020-0208-2 Wang, 2021, Resistive switching behavior, mechanism and synaptic characteristics in TiO2 nanosheets grown on Ti plate by hydrothermal method, J. Alloys Compd., 854, 157200, 10.1016/j.jallcom.2020.157200 Mahata, 2020, Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems, J. Alloys Compd., 826, 154434, 10.1016/j.jallcom.2020.154434 Zhao, 2021, Effect of voltage divider layer on self-current compliance resistive switching in Ta/TaOx/ITO structure with an ultra-low power consumption, Appl. Phys. Lett., 118 Acharyya, 2014, A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: a review, Microelectron. Reliab., 54, 541, 10.1016/j.microrel.2013.11.013 Sahu, 2020, Low power high speed 3-bit multilevel resistive switching in TiO2 thin film using oxidisable electrode, J. Phys. D Appl. Phys., 53, 225303, 10.1088/1361-6463/ab7acb Xiao, 2017, Resistive random access memory cells with a bilayer TiO2/SiOx insulating stack for simultaneous filamentary and distributed resistive switching, Adv. Funct. Mater., 27, 1700384, 10.1002/adfm.201700384 Wang, 2019, Overview of resistive random access memory (RRAM): materials, filament mechanisms, performance optimization, and prospects, Phys. Status Solidi RRL, 13, 1900073, 10.1002/pssr.201900073 Pan, 2014, Recent progress in resistive random access memories: materials, switching mechanisms, and performance, Mater. Sci. Eng. R, 83, 1, 10.1016/j.mser.2014.06.002 Zahoor, 2020, Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (mlc) storage, modeling, and applications, Nanoscale Res. Lett, 15, 1, 10.1186/s11671-020-03299-9 Siddik, 2020, Enhancement of data storage capability in a bilayer oxide-based memristor for wearable electronic applications, J. Phys. D Appl. Phys., 53, 295103, 10.1088/1361-6463/ab81d3 Bae, 2012, Oxygen ion drift-induced complementary resistive switching in homo TiOx/TiOy/TiOx and hetero TiOx/TiON/TiOx triple multilayer frameworks, Adv. Funct. Mater., 22, 709, 10.1002/adfm.201102362 Kim, 2015, Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames, Appl. Phys. Lett., 106 Kim, 2020, Reset voltage dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array, Appl. Phys. Lett., 117, 152103, 10.1063/5.0021626 Sahu, 2017, Remote control of resistive switching in TiO2 based resistive random access memory device, Sci. Rep., 7, 17224, 10.1038/s41598-017-17607-4 Xiao, 2017, Reliable and low-power multilevel resistive switching in TiO2 nanorod arrays structured with a TiOx seed layer, ACS Appl. Mater. Interfaces, 9, 4808, 10.1021/acsami.6b14206 Liu, 2018, An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics, Nanotechnology, 29, 415205, 10.1088/1361-6528/aad64d Lanza, 2019, Recommended methods to study resistive switching devices, Adv. Electron. Mater., 5, 1800143, 10.1002/aelm.201800143 Choi, 2009, Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO3 electrodes, Appl. Phys. Lett., 95, 10.1063/1.3173813 Bafrani, 2018, A facile approach for reducing the working voltage of Au/TiO2/Au nanostructured memristors by enhancing the local electric field, Nanotechnology, 29, 10.1088/1361-6528/aa99b7 Zhao, 2018, Highly flexible resistive switching memory based on the electronic switching mechanism in the Al/TiO2/Al/polyimide structure, ACS Appl. Mater. Interfaces, 10, 1828, 10.1021/acsami.7b16214 Yu, 2021, Self-rectifying and forming-free nonvolatile memory behavior in single-crystal TiO2 nanowire memory device, J. Alloys Compd., 858, 157749, 10.1016/j.jallcom.2020.157749 Park, 2013, In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices, Nanotechnology, 24, 295202, 10.1088/0957-4484/24/29/295202 Wan, 2018, Impact of potential barrier on electronic resistive switching performance based on Al/TiOx/Al structure, Vacuum, 156, 91, 10.1016/j.vacuum.2018.07.018 Kim, 2019, Fabrication of a Cu-Cone-Shaped cation source inserted conductive bridge random access memory and its improved switching reliability, Adv. Funct. Mater., 29, 1806278, 10.1002/adfm.201806278 Lübben, 2018, Processes and effects of oxygen and moisture in resistively switching TaOx and HfOx, Adv. Electron. Mater., 4, 1700458, 10.1002/aelm.201700458 Ismail, 2020, Eradicating negative-Set behavior of TiO2-based devices by inserting an oxygen vacancy rich zirconium oxide layer for data storage applications, Nanotechnology, 31, 325201, 10.1088/1361-6528/ab8b8e Liu, 2016, Eliminating negative-SET behavior by suppressing nanofilament overgrowth in cation-based memory, Adv. Mater., 28, 10623, 10.1002/adma.201603293 Dean, 1998 Prakash, 2015, Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application, Appl. Phys. Lett., 106, 233104, 10.1063/1.4922446 Tao, 2020, Making reversible transformation from electronic to ionic resistive switching possible by applied electric field in an asymmetrical Al/TiO2/FTO nanostructure, Appl. Surf. Sci., 502, 144124, 10.1016/j.apsusc.2019.144124 Sakellaropoulos, 2019, Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO2-x/TiO2-y-based bilayer structures, J. Appl. Phys., 126, 10.1063/1.5094242 Bousoulas, 2017, Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2-x based memory devices through experiments and simulations, J. Appl. Phys., 121, 10.1063/1.4977063 Kim, 2010, Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction, Appl. Phys. Lett., 97 Lim, 2015, Conduction mechanism of valence change resistive switching memory: a survey, Electronics, 4, 586, 10.3390/electronics4030586 Hsu, 2019, Electrode dependence of resistive switching characteristics in copper (II) oxide memory devices, Semicond. Sci. Technol., 34, 10.1088/1361-6641/ab1718 Lee, 2014, Effect of La3+ substitution with Gd3+ on the resistive switching properties of La0.7Sr0.3MnO3 thin films, Appl. Phys. Lett., 104, 191604, 10.1063/1.4876115 Zhu, 2014, The effect of electron localization on the electronic structure and migration barrier of oxygen vacancies in rutile, J. Phys. Condens. Matter, 26, 10.1088/0953-8984/26/5/055602 Abdelouahed, 2015, Relevance of non-equilibrium defect generation processes to resistive switching in TiO2, J. Appl. Phys., 118, 134103, 10.1063/1.4932225