Low consumption two-terminal artificial synapse based on transfer-free single-crystal MoS2 memristor

Nanotechnology - Tập 31 Số 26 - Trang 265202 - 2020
Jiaqiang Shen1, Baozeng Zhou1, Fang Wang1, Qing Wan2, Xin Shan1, Chuang Li1, Xin Lin1, Kailiang Zhang1
1School of Electrical and Electronic Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China
2School of Electronic Science & Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China

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Tài liệu tham khảo

10.1109/TCT.1971.1083337

10.1038/s41565-018-0302-0

Thomas A, 2013, J. Phys. D: Appl. Phys., 46

Kuzum D, 2013, Nanotechnology, 24, 10.1088/0957-4484/24/38/382001

10.1109/IEDM.2017.8268374

10.1038/ncomms15199

10.1109/JPROC.2018.2790840

10.1038/s41928-018-0023-2

10.1038/s41928-017-0006-8

10.1063/1.4991917

10.1038/nnano.2016.70

10.1038/nmat4756

10.1038/nmat3054

10.1038/nature23011

10.1038/nmat4856

10.1038/nmat3415

10.1021/acsnano.7b00113

10.1002/aelm.201700524

10.1021/acsami.5b07038

10.1021/acsami.7b10693

10.1002/adma.201800195

10.1002/smll.201901423

10.1002/adma.201806790

10.1002/aelm.201800662

10.1002/adma.201700906

10.1002/adma.201806227

10.1109/DRC.2018.8443301

Sun L, 2018, 2D Mater., 6

10.1021/acs.nanolett.8b05140

10.1002/adfm.201901106

10.1038/s41563-018-0248-5

10.1002/smll.201800079

10.1021/acsami.5b11781

10.1103/PhysRevX.4.031005

10.1038/nature25747

10.1021/acsnano.8b03977

10.1021/acsami.5b02782

10.1002/smll.201101016

10.1002/smll.201803465

10.1103/PhysRevLett.108.156802

10.1038/s41586-019-1052-3