Limitations of the thermally stimulated conductivity as a technique for studying the density of states ofa-Si:H

American Physical Society (APS) - Tập 46 Số 15 - Trang 9792-9795
Jiang-Huai Zhou1, Stephen R. Elliott1
1Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge, CB2 1EW, United Kingdom

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Tài liệu tham khảo

H. Fritzsche, 1985, Philos. Mag. B, 52, 299, 10.1080/13642818508240602

D. S. Misra, 1985, Phys. Rev. B, 31, 1047, 10.1103/PhysRevB.31.1047

M. Zhu, 1986, Philos. Mag. B, 53, 41, 10.1080/13642818608238970

F. Valentin, 1987, J. Non-Cryst. Solids, 97&98, 583, 10.1016/0022-3093(87)90136-0

M. Zhu, 1991, J. Non-Cryst. Solids, 137&138, 355, 10.1016/S0022-3093(05)80129-2

T. Tiedje, 1981, Solid State Commun., 37, 49, 10.1016/0038-1098(81)90886-3

J. Orenstein, 1981, Phys. Rev. Lett., 46, 1421, 10.1103/PhysRevLett.46.1421

D. S. Misra, 1985, Phys. Rev. B, 32, 4052, 10.1103/PhysRevB.32.4052

W. E. Spear, 1983, J. Non-Cryst. Solids, 59&60, 1, 10.1016/0022-3093(83)90514-8

D. L. Staebler, 1980, J. Appl. Phys., 51, 3262, 10.1063/1.328084

R. Carius, 1987, Disordered Semiconductors

H. Fritzsche, 1991, J. Non-Cryst. Solids, 137&138, 467, 10.1016/S0022-3093(05)80156-5