Limitations in THz power generation with Schottky diode varactor frequency multipliers

V. Krozer1, G. Loata2, J. Grajal de la Fuente3, P. Sanz3
1Orsted.DTU-EML, Kongens Lyngby, Denmark
2Physikalisches Institut der J. W. Goethe-Universitat, Frankfurt, Germany
3Universidad Politecnica Madrid, Madrid, Spain

Tóm tắt

We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f/sup -3/ instead of the f/sup -2/ predicted by theory. In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.

Từ khóa

#Power generation #Schottky diodes #Varactors #Frequency #Circuit simulation #Fabrication #Doping #Submillimeter wave devices #Design optimization #Circuit optimization

Tài liệu tham khảo

10.1109/THZ.1998.731667 10.1109/MWSYM.2001.967221 10.1109/75.491507 10.1049/el:20000659 10.1109/22.841962 krozer, 2002, Assessment of THz power generation from multipliers, ESA/ESTEC Tech Rep