Light-emitting nanocrystalline silicon by low-pressure chemical-vapor deposition of disilane
Tóm tắt
Porous silicon is an attractive material for silicon optoelectronics. The great advantage of porous silicon lies on the simple way of production which makes silicon nanostructures easily available. After several papers have been published on this topic, we are able to identify some disadvantages connected to the porous nature of the material and to the method of fabrication. Other dry processes can be used to produce Si nanostructures. In this paper we present a method fully compatible with the standard semiconductor technology. The optical and structural properties of the nanocrystalline films so far obtained are presented, together with some promising results indicating good electrical properties.
Tài liệu tham khảo
Canham L. T., Appl. Phys. Lett., 57 (1990) 1046.
Ossicini S. and Bisi O., this issue, p. 1121.
Ohno T., Shiraisi K. and Ogawa T., Phys. Rev. Lett., 69 (1992) 2400.
Read A. J., Need R. J. Nash K. J. Canham L. T., Calcott, P. D. J. and Qteish A., Phys. Rev. Lett., 69 (1992) 1232.
Buda F., Kohanoff J. and Parrinello M., Phys. Rev. Lett., 69 (1992) 1272.
Sanders G. D. and Dow J. D., Phys. Rev. B, 45 (1992) 9202.
Ren S. Y. and Dow J. D., Phys. Rev. B, 45 (1992) 6492.
Hirao M., Uda T. and Murayama Y., Mater. Res. Soc. Symp. Proc., 283 (MRS, Pittsburgh) 1993, p. 425.
Hybertsen M. S., Mater. Res. Soc. Symp. Proc., 256 (MRS, Pittsburgh) 1992, p. 179.
Takagahara T. and Takeda K. Phys. Rev. B, 46 (1992) 15578.
Berger M. G., Frohnhoff St., Theiss W., Rossow U. and Münder H., in Porous Silicon Science and Technology, edited by J. C. Vial and J. Derrien (Les Editions de Physique-Springer, Les Ulis) 1995.
Halimaoui A., in Porous Silicon Science and Technology, edited by J. C. Vial and J. Derrien (Les Editions de Physique-Springer, Les Ulis) 1995.
Nassiopoulos A. G., Grigoropoulos F., Canham L. T., Halimaoui A., Berbezier I., Gogolides E. and Papadimitriou D., Thin Solid Films, 255 (1995) 329.
Diligenti A., Nannini A., Pennelli G., Pieri F., Pellegrini V., Fuso F. and Allegrini M., this issue, p. 1197.
Canham L. T., School of Les Houches, France, Jan. 1994, oral presentation.
Tsu R., School of Les Houches, France, Jan. 1994, oral presentation.
Rückschloss M., Ambacher O. and Veprek S. J. Lumin., 57 (1993) 1.
Roura P., Costa J., Sulimov N. A., Morante J. R. and Bertran E., Appl. Phys. Lett., 67 (1995) 2830.
Otobe M. and Oda S., Jpn. J. Appl. Phys., 31 (1992) 1948.
Otobe M. and Oda S., Mater. Res. Soc. Symp. Proc., 283 (MRS, Pittsburgh) 1993, p. 519.
Furukawa S. and Miyasato T., Phys. Rev. B, 38 (1988) 5726.
Takagi H., Ogawa H., Yamazaki Y., Ishizaki A. and Nakagiri T., Appl. Phys. Lett., 56, (1990) 379.
Manfredotti C., Fizzotti F., Amato G., Boarino L. and Abbas M., Mater. Res. Soc. Symp. Proc., 283 (MRS, Pittsburgh) 1993, p. 507.
Campbell I. H. and Fauchet P. M., Solid State Commun., 58 (1986) 739.
Nemanich R. J., Buehler E. C., Legrice Y. M., Shroder R. E., Parsons G. N., Wang C., Lucowsky G. and Boyce J. B., J. non-Cryst. Solids, 114 (1989) 813.