Boher, 1998, Comportement en frottement sec de dépôts de SiCx (H) (1.5<x<3) élaborés par PACVD microonde sur acier, Ann. Chim. Sci. Mat., 23, 10.1016/S0151-9107(99)80028-2
1995
Pons, 1996, Thermodynamic heat and mass transport modeling of the sublimation growth of silicon carbide crystals, J. Electrochem. Soc., 143, 3727, 10.1149/1.1837280
Jensen, 1989, Chemical Vapor Deposition, dans Microelectronics Processing, 199
Kleijn, 1993
Kleijn, 1995, Chemical vapor deposition processes, dans Computational Modeling in Semiconductor Processing, 97
Meyyappan, 1995, 231
Nishino, 1983, Production of large-area single-crystal wafers for cubic SiC for semiconductor devices, Appl. Phys. Lett., 42, 460, 10.1063/1.93970
Karmann, 1993, CVD growth and characterization of single-cristalline 6H silicon carbide, Physica B, 185, 75, 10.1016/0921-4526(93)90216-S
Bécourt, 1993, Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon, Physica B, 185, 79, 10.1016/0921-4526(93)90217-T
Bécourt, 1993, Etude de la croissance cristalline de carbure de silicium et des technologies pour la réalisation de transistors MOS
Nordel, 1995, A new reactor concept for epitaxial growth of SiC, 33
Chaudhry, 1991, Role of carrier gases in epitaxial growth of β-SiC on Si by CVD, J. Cryst. Growth, 113, 120, 10.1016/0022-0248(91)90016-X
Takahashi, 1991, Effect of acceptor impurity addition in low temperature growth of 3C-SiC, J. Cryst. Growth, 115, 617, 10.1016/0022-0248(91)90814-L
Wu, 1995, Film growth mechanism in synthesis of β-SiC by using SiH2Cl2/C2H2/H2 CVD reaction system, 39
Hong, 1992, Study of the reaction of Si2H6 in the presence of C2H2 in synthesis of SiC films by LPCVD using macro/microgravity method, J. Electrochem. Soc., 139, 3652, 10.1149/1.2069138
Vincent, 1994, Chemical interaction during the chemical vapour deposition of silicon carbide on aluminosilicate fibres from halogenated precursors, J. Mat. Sci., 29, 1, 10.1007/BF00356565
Murooka, 1996, Growth rate and deposition process of silicon carbide film by low-pressure chemical vapor deposition, J. Cryst. Growth, 169, 485, 10.1016/S0022-0248(96)00415-0
Kaneko, 1988, Growth kinetics of silicon carbide CVD, J. Cryst. Growth, 91, 599, 10.1016/0022-0248(88)90127-3
Tang, 1995, Preparation of β-SiC using 1,2-Diméthyldisilane as precursor, J. Phys. II, 5, 777
Oshita, 1995, Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas, J. Cryst. Growth, 147, 111, 10.1016/0022-0248(94)00656-3
Agullo, 1992, Chemical vapour infiltration of SixC1−x films for the preparation of composite material using both organosilicon and hydrocarbon precursors, Thin Solid Films, 209, 52, 10.1016/0040-6090(92)90009-Z
Herlin, 1992, Investigation of the Assisted Chemical Vapor deposition from tetramethylsilane by in situ temperature and gas composition measurements, J. Phys. Chem., 96, 7063, 10.1021/j100196a041
Zhang, 1992, Process study of silicon carbide deposited on steel by plasma-assisted chemical vapor deposition from tetramethylsilane-argon system, Jpn. J. Appl. Phys., 31, 4053, 10.1143/JJAP.31.4053
Scordo, 1995, Contribution à l'étude de revêtements durs Si-C sur acier par dépôt chimique à partir d'une phase gazeuse activée par un plasma micro-onde ou radiofréquence
Andrieux, 1997, Revêtements sur acier par PACVD Radio fréquence et micro-onde: diagnostic de la phase gazeuse et optimisation de la tenue mécanique
Figueras, 1991, A morphological and structural study of SiC layers obtained by LPCVD using tetramethylsilane, J. Cryst. Growth, 110, 528, 10.1016/0022-0248(91)90290-L
Rodriguez-Clemente, 1992, Influence of temperature and tetramethylsilane partial pressure on the b-SiC deposition by cold-wall chemical vapor deposition, J. Cryst. Growth, 125, 533, 10.1016/0022-0248(92)90293-R
Rodriguez-Viejo, 1995, Growth morphology of low-pressure metalorganic chemical vapor deposition silicon carbide on a-SiO2/Si(100) substrates, J. Cryst. Growth, 155, 214, 10.1016/0022-0248(95)00196-4
Kuo, 1990, The effect of CH4 on CVD β-SiC growth, J. Electrochem. Soc., 137, 3688, 10.1149/1.2086288
Prebende, 1989, Mécanismes physico-chimiques mis en jeu dans le processus CVD d'élaboration de céramiques à base de carbure de silicium en réacteur à parois chaudes
Lespiaux, 1995, Correlations between gas phase supersaturation, nucleation process and physical-chemical characteristics of silicon carbide deposited from Si-C-H-Cl system on silica substrates, J. Mat Sci., 30, 1500, 10.1007/BF00375255
Loumagne, 1995, Experimental kinetic study of the chemical vapor deposition of SiC-based ceramics from CH3SiCl3/H2 gas precursor, J. Cryst. Growth, 155, 198, 10.1016/0022-0248(95)00180-8
Ganz, 1996, In situ optical analysis of the gas phase during the deposition of silicon carbide from methyltrichlorosilane, J. Electrochem. Soc., 143, 1654, 10.1149/1.1836694
Wrobel, 1995, Film-forming precursors in plasma chemical vapor deposition using tetramethyl-1,3-Disilacyclobutane as a source compound, J. CVD, 4, 87
Ferro, 1996, Infrared kinetic study of ultrathin SiC buffer layers grown on Si(100) by reactive chemical vapor deposition, Thin Solid Films, 278, 22, 10.1016/0040-6090(95)08034-1
Pons, 1995, The modeling routes for the chemical vapor deposition process: application to Si1−xGex vapour deposition, Appl. Surf. Sci., 91, 34, 10.1016/0169-4332(95)00091-7
Bernard, 1996, The CVD process: modelling aspects, 59
Pons, 1993, Numerical modeling for CVD simulation and process optimization: coupled thermochemical and mass transport approaches, Surf. Coat. Technol., 41, 274, 10.1016/0257-8972(93)90238-J
Bernard, 1990, Benefits and limits of the thermodynamic approach to CVD process, 168, 3
Thomas, 1993, LPCVD WSi2 films using tungsten chlorides and silane, J. Electrochem. Soc., 140, 475, 10.1149/1.2221072
Kleijn, 1991, A mathematical model of the hydrodynamics and gas-phase reactions in silicon LPCVD in a single wafer reactor, J. Electrochem. Soc., 138, 2190, 10.1149/1.2085948
Wang, 1994, Chemical vapor deposition of silicon from disilane under reduced pressure in a circular impinging jet reactor. Simulation and experiments, J. Electrochem. Soc., 141, 824, 10.1149/1.2054818
Wang, 1993, 2D modelling of a non-confined circular impinging jet reactor, J. Crystal Growth, 126, 373, 10.1016/0022-0248(93)90045-X
Jensen, 1988, Three-dimensional flow effects in silicon CVD in horizontal reactors, J. Electrochem. Soc., 135, 459, 10.1149/1.2095638
Coltrin, 1984, A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor, J. Electrochem. Soc., 131, 425, 10.1149/1.2115598
Coltrin, 1989, A mathematical model of the fluid mechanics and gas-phase chemistry in a rotating disk chemical vapor deposition reactor, J. Electrochem. Soc., 136, 819, 10.1149/1.2096750
Duverneuil, 1992, Two-dimensional modelling of low-pressure chemical vapor deposition hot wall tubular reactors I, J. Electrochem. Soc., 139, 296, 10.1149/1.2069189
Couderc, 1993, CVD process engineering, modelling aspects, J. Phys. IV, 3, 3, 10.1051/jp4:1993301
Blanquet, 1993, An approach to develop and verify tractable chemical models for the CVD of Si, C and SiC, Pro. Vol. 93-2, 103
Slater, 1959
Clark, 1985
Coltrin, 1991, Surface Chernkin: a general formalism and software for analysing heterogeneous chemical kinetics at a gas-surface, Int. J. Chem. Kinetics, 23, 1111, 10.1002/kin.550231205
Pons, 1993, Comparison of Raman measurements and mass transport modeling for the chemical vapor deposition of tungsten in the 773–1073K temperature range, J. Chem. Vap. Dep., 2, 135
Ern, 1994, Multicomponent Transport Algorithms, M 24
Ern, 1995, Fast and accurate multicomponent transport property evaluation, J. Comput. Phys., 120, 105, 10.1006/jcph.1995.1151
Ern, 1995, On the evaluation of thermal diffusion coefficients in chemical vapor deposition processes, J. CVD, 3, 3
Kee, 1986, A fortran computer code package for the evaluation of gas-phase multicomponent transport properties, Sandia National Laboratories Report 86–8246, SAND
Phoenics est un produit de CHAM Ltd., Wimbledon, London, GB.
Fluent est un produit de Fluent Inc., Lebanon, NH.
Fidap est un produit de Fluid Dynamics Int., Evanston, IL.
CFD-ACE est un produit de CFD Research Corp., Hunstville, AL
Flux-Expert est un produit de DT2I, Meylan, France.
Kushner, 1996, Advances in Plasma Equipment Modeling, Solid State Technol., 39, 135
Boeuf, 1987, Numerical model of rf glow discharges, Phys. Rev. A, 36, 2782, 10.1103/PhysRevA.36.2782
Rhallabi, 1996, Modeling of Plasma Surface Interactions, Le Vide, 280, 185
Moisan, 1996, Surface-wave sustained plasmas: toward a better understanding of RF microwave discharges, dans Phenomena in ionized gases, 25
Despax, 1993, Analyse et Modélisation du Fonctionnement des Réacteurs de Traitement des Surfaces Assisté par Plasma, 266, 17
Cacquineau, 1996, Modélisation numérique de réacteurs plasmas: analyse des processus chimiques et étude de dispositifs de conception variée
Layellon, 1994, Analysis and modelling of plasma enhanced CVD reactors. Part I: two dimensional treatment of a-Si:H deposition, Plasma Sources Sci. Technol., 3, 61, 10.1088/0963-0252/3/1/008
Dollet, 1995, Analysis and numerical modelling of silicon nitride deposition in a plasma enhanced chemical vapour deposition reactor. Part I: bidimensional modelling, Plasma Sources Sci. Technol., 4, 94, 10.1088/0963-0252/4/1/010
Hassouni, 1996, Modeling of mass and energy transport in H2 plasma obtained under diamond deposition discharge conditions, J. CVD, 5, 38
Brinkmann, 1995, The effective drift-diffusion plasma model and its implementation into Phoenics-CVD, Phoenics J., 8, 455
Kingon, 1983, Thermodynamic calculations for the Chemical Vapor Deposition of silicon carbide, J. Am. Ceram. Soc., 66, 558, 10.1111/j.1151-2916.1983.tb10091.x
Fishman, 1985, Thermodynamic analysis and kinetic implications of Chemical Vapor Deposition of SiC from Si-C-H-Cl gas system, J. Am. Ceram. Soc., 68, 185, 10.1111/j.1151-2916.1985.tb15295.x
Mélange/ Gémini est un produit du LTPCM- Thermodata, BP 75 38402 Saint Martin D'Hères, France.
Ericksson, 1990, Chemsage a computer program for the calculation of complex chemical equilibria, Met. Trans B, 21, 1013, 10.1007/BF02670272
1986, Janaf Thermochemical Tables, J. Phys. Chem. Ref. Data, 14
SGTE, Thermodata, BP 66, 38402 Saint Martin D'Hères, France.
Barin, 1989
Gurvich, 1990
Allendorf, 1992, Theoretical Study of the thermochemistry of molecules in the Si-C-H system, J. Phys. Chem., 96, 428, 10.1021/j100180a080
Allendorf, 1993, Theoretical Study of the thermochemistry of molecules in the Si-C-Cl-H system, J. Phys. Chem., 97, 720, 10.1021/j100105a031
Allendorf, 1993, Equilibrium prediction of the role of organosilicon compounds on the chemical vapor deposition of silicon carbide, J. Electrochem. Soc., 140, 747, 10.1149/1.2056152
Stinespring, 1989, Surface studies relevant to silicon carbide chemical vapor deposition, J. Appl. Phys., 65, 1733, 10.1063/1.342947
Huber, 1979
Berkowitz, 1987, Photoionization mass spectrometric studies of SiHn (n=1,4), J. Chem. Phys, 86, 1235, 10.1063/1.452213
Rocabois, 1995, Thermodynamics of the Si-C system, II Mass spectrometric determination of the enthalpies of formation of molecules in the gaseous phases, High temperatures high pressures, 27–28, 25, 10.1068/htrt34
Rocabois, 1995, Thermodynamics of the Si-C system, I Mass spectrometric sudies of the condensed phases at high temperature, High temperatures high pressures, 27–28, 3, 10.1068/htrt35
André, 1996, Plasma Chemistry and Plasma Processing, 16, 379, 10.1007/BF01447152
J. Aubreton, M.F. Elchinger, P. Fauchais, New method to calculate thermodynamic and transport properties of a multi-temperature plasma: application to N2 plasmas, à paraître dans Plasma Chemistry and Plasma Processing.
Hong, 1992, Composition change of SiCx (x=1,2) films due to variation of films precursors in the Si2H6/C2H2 Chemical Vapor Deposition reaction system, Appl. Phys. Lett., 61, 910, 10.1063/1.107725
Gokoglu, 1993, A kinetic and equilibrium analysis of silicon carbide CVD on monofilaments, vol. 93, 392
Stihespring, 1988, Gas phase kinetics analysis and implications for the silicon carbide chemical vapor deposition, J. Cryst. Growth, 87, 481, 10.1016/0022-0248(88)90096-6
Annen, 1990, Modeling of the SiC chemical vapor deposition process and comparison with experimental results, J. Vac. Sci. Technol. A, 8, 2970, 10.1116/1.576615
Allendorf, 1991, A model for silicon carbide vapor deposition, J. Electrochem.Soc., 138, 841, 10.1149/1.2085688
Lespiaux, 1995, Chemisorption on β-SiC and amorphous SiO2 during CVD of silicon carbide form me Si-C-H-Cl system. Correlations with the nucleation process, Thin Solid Films, 265, 40, 10.1016/0040-6090(95)06562-8
Allendorf, 1995, Modeling the gas-phase chemistry of silicon carbide formation, 263, 39
Papasouliotis, 1994, On the homogeneous chemistry of the thermal decomposition of methyltrichlorosilane, J. Electrochem. Soc., 141, 1599, 10.1149/1.2054969
Emcore Corporation, 3 Rue Mozart, 44240 La Chapelle Sur Erdre, France: http://www.emcore.com.
Cape Simulation, Newto, Ma 02158, USA, http://www.capesim.com.
Wang, 1995, Optimization of wall-less like reactor by simulation, Chem. Eng. Sci., 50, 1605, 10.1016/0009-2509(95)00029-5
Kuszmarski, 1993, Analysis of transport in a CVD silicon carbide deposition reactor, J. CVD, 2, 20
de Jong, 1996, Numerical modelling of silicon carbide chemical vapor deposition, Diamond Rel. Mat., 5, 141, 10.1016/0925-9635(96)00475-X
Makarof, 1997, Modeling of sublimation growth of SiC: critical evaluation of models and software
Blanquet, 1993, Tractable chemical models for CVD of silicon and carbon, J. Phys. IV, C3, 43
Ho, 1990, Computer simulation study on atmospheric pressure CVD process for amorphous silicon carbide, J. Electrochem. Soc., 137, 2215, 10.1149/1.2086915
1992
Warnatz, 1983, 197
Kuijlaars, 1995, Multi-component diffusion in multiple-wafer chemical vapor deposition reactors, Chem. Eng. J., 57, 127
Kuijlaars, 1995, Modeling of a cold-wall tungsten CVD reactor, Phoenics J., 8, 465
Andrieux, 1998, Dépôts par plasma CVD microonde à partir de mélanges tetraméthylsilane-argon: influence des paramètres expérimentaux, Ann. Chim. Sci. Mat., 23
Andrieux, 1998, Etude par spectrométrie d'émission de décharges radiofréquence et microonde lors de dépôt chimique en phase gazeuse (PACVD) dans le système Si-C-H-Ar, Ann. Chim. Sci. Mat., 23, 10.1016/S0151-9107(99)80021-X