Layer‐Type Transition Metal Dichalcogenides — a New Class of Electrodes for Electrochemical Solar Cells

Wiley - Tập 81 Số 4 - Trang 361-369 - 1977
H. Tributsch1
1Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4–6, 1000 Berlin 33, Germany

Tóm tắt

AbstractThe problem of the rapid anodical photoelectrochemical desintegration of visible‐light‐sensitive semiconductor electrodes (e.g. CdS, GaAs) in presently investigated continuously operating electrochemical solar cells is tackled by two improvements:a) The use of covalent layer‐type transition metal dichalcogenides as electrode material, in which photon absorption involves d‐d transitions and does not produce a splitting of chemical bonds andb) the operation of the transition metal dichalcogenides as photo‐cathodes, which is possible with p‐conducting material.The first photocell of this kind is constructed with p‐conducting natural MoS2 layer crystals and Fe2+/3+ as redox‐couple. It proved to be stable during longtime experiments. A power output of up to 1% was obtained. The limiting factor was found to be the insufficient solid state behaviour of the available natural crystals (high recombination losses through traps, weak p‐character). A considerable improvement is to be expected from better quality p‐type electrode‐material.Some development possibilities for solar cells, based on covalent semiconducting layer‐type transition metal dichalcogenides are outlined.

Từ khóa


Tài liệu tham khảo

10.1007/BF00625956

10.1038/263097a0

H.Gerischer lecture given at “International Conference on the Photochem. Conversion and Storage of Solar Energy”. London Ontario Aug.1976.

10.1038/238037a0

10.1246/bcsj.44.1148

10.1038/253719a0

10.1073/pnas.72.4.1518

10.1021/ja00859a007

10.1149/1.2134312

10.1038/257383a0

10.1016/0013-4686(75)90016-X

10.1246/bcsj.48.1041

10.1149/1.2134048

10.1007/BF01058864

10.1021/ja00417a009

10.1021/ja00426a017

10.1063/1.88723

10.1021/j100553a014

10.1063/1.1730950

10.1149/1.2423779

Gerischer H., 1970, Physical Chemistry: An Advanced Treatise

10.1016/S0022-0728(75)80359-7

Gerischer H., 1976, Ber. Bunsenges. physik. Chem., 80, 329

10.1021/ja00422a087

J.Gobrecht master thesis Fritz‐Haber‐Institut Berlin1976.

10.1063/1.89004

10.1038/261403a0

H.Tributsch Z. Naturwiss. submitted for publication.

10.1080/00018736900101307

10.1098/rspa.1965.0071

Yoffe A. D., 1973, Layer Compounds, 147

10.1103/PhysRev.163.743

10.1139/p71-306

Beal A. R., 1972, J. Physics, 3531

10.1098/rspa.1963.0075

10.1103/PhysRevB.8.3719

R. T.Shuey Semiconducting ore minerals Elsevier Scientific Publishing Company Amsterdam‐Oxford‐New York1975.

Williams P. M., 1973, J. Physics, 6, L36

10.1103/PhysRevLett.30.1175

10.1103/PhysRevLett.31.1400

10.1103/PhysRevLett.28.808

H.TributschandJ. C.Bennett J. electroanalyt. Chem. in press.

H.Tributsch H.Gerischer andJ. C.Bennett J. electroanal. Chem. (to be published).

Moss T. S., 1973, Semiconductor Opto‐Electronics, 152

Rose A., 1956, Proc. Photocond. Conf. Atlantic City, 3

10.1007/BFb0108466

10.1007/BFb0107748

10.1021/ic50149a052

10.1063/1.430342